Improved photovoltaic properties of Si quantum dots/SiC multilayers-based heterojunction solar cells by reducing tunneling barrier thickness

doi:10.1007/s12200-013-0324-z

Front Optoelec

2013, Vol. 6

Issue (2) : 228-233 https://doi.org/10.1007/s12200-013-0324-z

RESEARCH ARTICLE

Improved photovoltaic properties of Si quantum dots/SiC multilayers-based heterojunction solar cells by reducing tunneling barrier thickness

Yun-Qing CAO, Xin XU, Shu-Xin LI, Wei LI, Jun XU(

), Kunji CHEN

School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

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Abstract

Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC stacked structures prepared in plasma enhanced chemical vapor deposition (PECVD) system. The microstructures were examined by transmission electron microscopy (TEM) and Raman spectroscopy, and results demonstrate the formation of Si QDs. Moreover, p-i-n devices containing Si QDs/SiC multilayers were fabricated, and their photovoltaic property was investigated. It was found that these devices show the good spectral response in a wide wavelength range (400–1200 nm). And it was also observed that by reducing the thickness of SiC layer from 4 to 2 nm, the external quantum efficiency was obviously enhanced and the short circuit current density (J_sc) was increased from 17.5 to 28.3 mA/cm², indicating the collection efficiency of photo-generated carriers was improved due to the reduced SiC barriers.

Keywords Si quantum dots (Si QDs) SiC multilayer solar cells transmission electron microscopy (TEM) Raman spectroscopy

Corresponding Author(s): XU Jun,Email:junxu@nju.edu.cn

Issue Date: 05 June 2013

Cite this article:

Yun-Qing CAO,Xin XU,Shu-Xin LI, et al. Improved photovoltaic properties of Si quantum dots/SiC multilayers-based heterojunction solar cells by reducing tunneling barrier thickness[J]. Front Optoelec, 2013, 6(2): 228-233.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-013-0324-z
https://academic.hep.com.cn/foe/EN/Y2013/V6/I2/228

Fig.1 Schematic diagram of solar cell containing Si QDs/SiC MLs

Fig.2 TEM micrographs of as-deposited a-Si (4 nm)/a-SiC (4 nm) multilayers

Fig.3 (a) Raman spectra of Si (4 nm)/SiC (2 nm) MLs before and after annealing; (b) Raman spectra of Si (4 nm)/SiC (4 nm) MLs before and after annealing; (c) TEM micrographs of formed Si QDs after 1000°C annealing

Fig.4 Optical absorptance of (a) Si (4 nm)/SiC (4 nm) MLs after 900°C and 1000°C annealing; (b) Si (4 nm)/SiC (2 nm) MLs after 1000°C annealing

Fig.5 Dark characteristics of device containing 1000°C annealed Si QDs (4 nm)/SiC (4 nm) and Si QDs (4 nm)/SiC (2 nm) MLs. Inset is the ln (/)-1/ plot of curve

Fig.6 External quantum efficiency of solar cells containing 1000°C annealed Si QDs (4 nm) /SiC (4 nm) and Si QDs (4 nm)/SiC (2 nm) MLs. Inset is the measured illuminatedcharacteristics of those samples

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