Influence of substrate temperature on <italic>in situ</italic>-textured ZnO thin films grown by MOCVD

doi:10.1007/s12200-013-0326-x

Front Optoelec

2013, Vol. 6

Issue (3) : 270-274 https://doi.org/10.1007/s12200-013-0326-x

RESEARCH ARTICLE

Influence of substrate temperature on in situ-textured ZnO thin films grown by MOCVD

Yajuan ZHENG, Xiangbin ZENG(

), Xiaohu SUN, Diqiu HUANG

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

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Abstract

The influence of substrate temperature on microstructure, electrical and optical properties of in situ-textured zinc oxide (ZnO) films fabricated by metal organic chemical vapor deposition (MOVCD) had been investigated. Results indicated that the substrate temperature played a very important role on preparation of ZnO thin film. With the raising of temperature, firstly ZnO crystals were perpendicular to the substrate, then they were grown inclining toward the substrate, finally ZnO crystals grown in layers but not regular. Consequently, ZnO film surface morphology changed from smooth to a pyramid structure and then disappeared little by little. Moreover, it was also found in this study that ZnO film was characterized with high crystallinity, low resistivity (2.17 × 10^-2) and high transmittance (>80%). These results suggested that ZnO thin film is suitable for front electrode of silicon thin film solar cell.

Keywords metal organic chemical vapor deposition (MOVCD) in situ-textured zinc oxide (ZnO) thin film temperature

Corresponding Author(s): ZENG Xiangbin,Email:eexbzeng@163.com

Issue Date: 05 September 2013

Cite this article:

Yajuan ZHENG,Xiangbin ZENG,Xiaohu SUN, et al. Influence of substrate temperature on in situ-textured ZnO thin films grown by MOCVD[J]. Front Optoelec, 2013, 6(3): 270-274.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-013-0326-x
https://academic.hep.com.cn/foe/EN/Y2013/V6/I3/270

Fig.1 XRD data as function of substrate temperature

Fig.2 SEM results of ZnO thin film at different temperature. (a) 160°C; (b) 170°C; (c) 180°C; (d) 190°C

Fig.3 AFM result of ZnO film grown at 180°C

Fig.4 Resistivity (a); mobility (b); carrier concentration (c) of ZnO thin films at different substrate temperature

Fig.5 Transmittance at different temperature

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