Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

doi:10.1007/s12200-014-0379-5

Front. Optoelectron.

0, Vol.

Issue () : 501-508 https://doi.org/10.1007/s12200-014-0379-5

RESEARCH ARTICLE

Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

Pradip DALAPATI,Nabin Baran MANIK(

),Asok Nath BASU

Condensed Matter Physics Research Center, Department of Physics, Jadavpur University, Kolkata 700032, India

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Abstract

In the present work, we measured the forward bias current-voltage (I-V) characteristics of Si-doped n type gallium arsenide (GaAs) heterostructures infrared emitter over a wide temperature range from 350 to 77 K. Results showed that the slopes of the exponential curve changed slowly with temperature. The analysis of the various tunneling mechanisms indicated that the tunneling current varied approximately as a function of ~ exp(- aE_g + beV) where the parameters a and b varied indistinctively with temperature and voltage. The dependence of forward tunneling current on the temperature and bias can be explained by thermally induced band gap shrinkage and bias induced route change respectively. These results will be helpful for application of the optoelectronics device in both high and low temperature ambiences.

Keywords infrared emitter tunneling characteristic energy band gap thermal stress

Corresponding Author(s): Nabin Baran MANIK

Online First Date: 11 April 2014 Issue Date: 12 December 2014

Cite this article:

Pradip DALAPATI,Nabin Baran MANIK,Asok Nath BASU. Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter[J]. Front. Optoelectron., 0, (): 501-508.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-014-0379-5
https://academic.hep.com.cn/foe/EN/Y0/V/I/501

Fig.1 I-V characteristics of GaAs based infrared emitter in the temperature range of 350–77 K

Tab.1 Experimental values of n₁, n₂, E₁, E₂ (for both low-bias and medium-bias, refer Eq. (1)), E₁/E₂, peak wavelength l_max and the band gap energy E_g at different temperatures

Fig.2 Variations of characteristic energies (E) and ideality factors (n) as function of temperature

Fig.3 Temperature dependencies of pre-exponential factors I_S1 of low-voltage current component (close square) and I_S2 of medium-voltage current component (close triangle) with temperature

Fig.4 1/C² as function of reverse bias voltage (V) for GaAs infrared emitter at room temperature

Fig.5 Proposed model for tunneling recombination in Si-doped n type-GaAs infrared emitter. The quantities E_C, E_V and E_F denote the conduction band, the valence band and Fermi energy, respectively

Fig.6 Variation of peak wavelength (l_max) and band gap (E_g) in the temperature range from 350 to 77 K. The continuous line represents the theory, while dots the experimental points

Fig.7 Variation of temperature dependence band gap energy with temperature

Fig.8 Band gap dependence of forward tunneling current at different voltages of medium-bias region

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