Absorption density control in waveguide photodiode---analysis, design, and demonstration

doi:10.1007/s12200-014-0421-7

Front. Optoelectron.

2014, Vol. 7

Issue (3) : 385-392 https://doi.org/10.1007/s12200-014-0421-7

RESEARCH ARTICLE

Absorption density control in waveguide photodiode---analysis, design, and demonstration

Dingbo CHEN(

),Jeffery BLOCH,Rui WANG,Paul K. L. YU

Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Dr, La Jolla, CA 92093, USA

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Abstract

A modal analysis is conducted for analyzing the absorption profile of high power waveguide photodiodes designed for analog optical link. The excitation of guided modes with large filling factor in the absorber is identified as a limiting factor for the performance of waveguide photodiodes at high optical power, including power handling capability, and bandwidth-efficiency product. A waveguide photodiode design, which spatially separates the input waveguide from the absorber in the lateral direction, is analyzed and experimentally demonstrated to suppress the excitation of mode with large filling factor. Photocurrent>60 mA under -4 V bias is measured, with 0.80 A/W responsivity. This design illustrates that high power handling capability can be achieved without compromising the bandwidth-efficiency product.

Keywords photodiode waveguide thermal failure high power mode excitation

Corresponding Author(s): Dingbo CHEN

Issue Date: 09 September 2014

Cite this article:

Dingbo CHEN,Jeffery BLOCH,Rui WANG, et al. Absorption density control in waveguide photodiode---analysis, design, and demonstration[J]. Front. Optoelectron., 2014, 7(3): 385-392.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-014-0421-7
https://academic.hep.com.cn/foe/EN/Y2014/V7/I3/385

Fig.1 Schematic of traditional WIP for high power applications

Fig.2 Top view of thermally failed WIP with traditional WIP structure

Fig.3 Cross-sectional view of example of traditional WIP (a); field plot for the 0^th and 1^st orders modes at the center of waveguide along x direction (b) and y direction (c)

Fig.4 Simulated absorption profile in traditional WIP shown in Fig. 3(a), with WG ridge width, W₂ varied. The mode excitation coefficient χ of first three major modes 0^th, 1^st, and 2^nd are listed in an enclosed table, while all other modes with χ<0.01 are neglected.

Fig.5 Comparisons of waveguide structure (a) and absorption profile (b) among WIPs with different spatial separation δ x between input waveguide and absorber at x direction

Fig.6 Schematic of DCPD

Fig.7 Field plot for first 4 major modes in the passive MMI and large Г modes in DCPD active section along x direction

Tab.1 Excitation coefficient χ and filling factor Г of the first 5 major modes and the large Г mode in DCPD

Fig.8 Waveguide structure of DCPD (a); MUTC layer structure of DCPD (b); simulated absorption profile of DCPD (c)

Fig.9 DC optical power handling test of three DCPD devices with different delay lengths, in comparison with WIP device fabricated with the same waveguide dimension and the same layer structure with DCPD. The device responsivity is recorded at incremental photocurrent level until thermal failure happens

Fig.10 Top view picture of thermally failed DCPD

Fig.11 Varying absorption near front end by changing WG thickness d in traditional WIP (a) and by changing delay length in DCPD (b)

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