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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

Postal Subscription Code 80-976

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Front. Optoelectron.    2015, Vol. 8 Issue (4) : 456-460    https://doi.org/10.1007/s12200-015-0459-1
PERSPECTIVE
Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices
Bo SHEN()
Research Center for Wide Bandgap Semiconductors and State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
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Corresponding Author(s): Bo SHEN   
Just Accepted Date: 12 June 2015   Online First Date: 01 September 2015    Issue Date: 24 November 2015
 Cite this article:   
Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices[J]. Front. Optoelectron., 2015, 8(4): 456-460.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-015-0459-1
https://academic.hep.com.cn/foe/EN/Y2015/V8/I4/456
Fig.1  

Main application areas and industry chain of LED semiconductor lighting
Fig.2  

LED semiconductor intelligent lighting
Fig.3  

Theoretical limit power of three generations of semiconductor materials HEMTs
Fig.4  

Several companies that relatively successful industrialized GaN-based HEMT
Fig.5  

Development of power electronic devices
Fig.6  

Performance comparisons of power electronic devices
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