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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

Postal Subscription Code 80-976

Front. Optoelectron.    2017, Vol. 10 Issue (1) : 45-50    https://doi.org/10.1007/s12200-016-0562-y
RESEARCH ARTICLE
Design of compensation pixel circuit with In-Zn-O thin film transistor for active-matrix organic light-emitting diode 3D display
Xiao HU1,Xingheng XIA1,Lei ZHOU2,Lirong ZHANG2,Weijing WU1()
1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2. Guangzhou New Vision Opto-Electronic Technology Co. Ltd., Guangzhou 510530, China
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Abstract

This paper presents a new compensation pixel circuit suitable for active-matrix organic light-emitting diode (AMOLED) stereoscopic three dimensional (3D) displays with shutter glasses. The simultaneous emission method was used to solve the crosstalk problem, in which the periods of initialization and threshold voltage detection occur for each pixel of whole panel simultaneously. Furthermore, there was no need of the periods of initialization and threshold voltage detection from the second frame beginning by employing threshold voltage one-time detection method. The non-uniformity of the proposed pixel circuit was considerably low with an average value of 8.6% measured from 20 discrete proposed pixel circuits integrated by In-Zn-O thin film transistors (IZO TFTs). It was shown that the OLED current almost remains constant for the number of frames up to 70 even the threshold voltage detection period only exists in the first frame.

Keywords active-matrix organic light-emitting diode (AMOLED)      compensation pixel circuit      three dimensional (3D) display      simultaneous emission     
Corresponding Author(s): Weijing WU   
Just Accepted Date: 28 September 2016   Online First Date: 25 October 2016    Issue Date: 17 March 2017
 Cite this article:   
Xiao HU,Xingheng XIA,Lei ZHOU, et al. Design of compensation pixel circuit with In-Zn-O thin film transistor for active-matrix organic light-emitting diode 3D display[J]. Front. Optoelectron., 2017, 10(1): 45-50.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-016-0562-y
https://academic.hep.com.cn/foe/EN/Y2017/V10/I1/45
Fig.1  3D implementation by the conventional progressive emission at (a) 120 Hz; (b) 240 Hz; and (c) 480 Hz, respectively, and (d) by the simultaneous emission at 120 Hz
Fig.2  Proposed pixel circuit schematic and control signals timing diagram of the first and second frames
Fig.3  Characteristics of (a) IZO TFT (W/L = 20 mm/10 mm) and (b) OLED
parameter value
V1, V2, V3/V - 5~12
VDD/V 15
(W/L)T1, T2, T3/(mm·mm−1) 10/10
(W/L)T4/(mm·mm−1) 20/10
C1/pF 0.4
C2/pF 0.4
Tab.1  Design parameters of the proposed pixel circuit
Fig.4  Transient simulation results of the node voltage and OLED current
Fig.5  Optical images of the proposed pixel circuit
Fig.6  Non-uniformity of OLED current versus average current for the proposed pixel circuit and conventional 2T1C pixel circuit
Fig.7  OLED current versus input data at different power voltage VDD
Fig.8  Measured OLED current versus N at different input data
1 Dawson R M A, Shen Z, Furst D A, Connor S, Hsu J, Kane M G, Stewart R G, Ipri A, King C N, Green P J, Flegal R T, Pearson S, Barrow W A, Dickey E, Ping K, Robinson S, Tang C W, Van Slyke S, Chen F, Shi J, Lu M H, Sturm J C. The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays. International Electron Devices Meeting, IEDM, Technical Digest,1998, 168(3): 875–878
https://doi.org/10.1109/IEDM.1998.746494
2 Nathan A, Kumar A, Sakariya K, Servati P, Sambandan S, Striakhilev D. Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic. IEEE Journal of Solid-State Circuits, 2004, 39(9): 1477–1486
https://doi.org/10.1109/JSSC.2004.829373
3 Park D W, Kang C K, Park Y S, Chung B Y, Chung K H, Kim K, Kim B H, Kim S S. High-speed pixel circuits for large-sized 3-D AMOLED displays. Journal of the Society for Information Display, 2011, 19(4): 329–334
https://doi.org/10.1889/JSID19.4.329
4 Yoon J S, Lee J M, Lee Y H,Lee Y H, Oh D H, Kim T G, Oh K H, Kim B S. 27.2: 31-inch FHD AMOLED 3-D TV using emission-switch control method. Sid Symposium Digest of Technical Papers, 2011, 42(1): 353–356
5 Lee B W, Ji I H, Han S M, Sung S D, Shin K S, Lee J D, Kim B H, Berkeley B H, Kim S S. Novel simultaneous emission driving scheme for crosstalk-free 3D AMOLED TV. Sid Symposium Digest of Technical Papers,, 2010, 41(1): 758–761
6 Lin C L, Chang W Y, Hung C C, Tu C D. LTPS-TFT pixel circuit to compensate for OLED luminance degradation in three-dimensional AMOLED display. IEEE Electron Device Letters, 2012, 33(5): 700–702
https://doi.org/10.1109/LED.2012.2188270
7 Wu W J, Zhou L, Yao R H, Peng J B. A new voltage-programmed pixel circuit for enhancing the uniformity of AMOLED displays. IEEE Electron Device Letters, 2011, 32(7): 931–933
https://doi.org/10.1109/LED.2011.2148152
8 Lee H J, Kim J H, Han M K. A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED. IEEE Electron Device Letters, 2005, 26(12): 897–899
https://doi.org/10.1109/LED.2005.859674
9 Lin C L, Chen Y C. A novel LTPS-TFT pixel circuit compensating for TFT threshold-voltage shift and OLED degradation for AMOLED. IEEE Electron Device Letters, 2007, 28(2): 129–131
https://doi.org/10.1109/LED.2006.889523
10 Wu W J, Xia X H, Li G M, Zhou L, Zhang L R, Yao R H, Peng J B. High-speed voltage-programmed pixel circuit for AMOLED displays employing threshold voltage one-time detection method. IEEE Electron Device Letters, 2013, 34(9): 1148–1150
https://doi.org/10.1109/LED.2013.2271908
11 Lin C L, Liu Y T, Lee C E, Chen P S, Chu T C, Hung C C. A-InGaZnO active-matrix organic LED pixel periodically detecting thin-film transistor threshold voltage once for multiple frames. IEEE Electron Device Letters, 2015, 36(11): 1166–1168
https://doi.org/10.1109/LED.2015.2480861
12 Li M, Lan L, Xu M, Xu H, Luo D, Xiao P, Peng J. Performance improvement of oxide thin-film transistors with a two-step-annealing method. Solid-State Electronics, 2014, 91: 9–12
https://doi.org/10.1016/j.sse.2013.09.008
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