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Frontiers of Optoelectronics

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Front. Optoelectron.    2018, Vol. 11 Issue (1) : 77-91    https://doi.org/10.1007/s12200-018-0772-6
REVIEW ARTICLE
On-chip silicon polarization and mode handling devices
Yong ZHANG, Yu HE, Qingming ZHU, Xinhong JIANG, Xuhan Guo, Ciyuan QIU, Yikai SU()
State Key Lab of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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Abstract

Mode- and polarization-division multiplexing are new promising options to increase the transmission capacity of optical communications. On-chip silicon polarization and mode handling devices are key components in integrated mode- and polarization-division multiplexed photonic circuits. In this paper, we review our recent progresses on silicon-based polarization beam splitters, polarization splitters and rotators, mode (de)multiplexers, and mode and polarization selective switches. Silicon polarization beam splitters and rotators are demonstrated with high extinction ratio, compact footprint and high fabrication tolerance. For on-chip mode multiplexing, we introduce a low loss and fabrication tolerant three-mode (de)multiplexer employing sub-wavelength grating structure. In analogy to a conventional wavelength selective switch in wavelength-division multiplexing, we demonstrate a selective switch that can route mode- and polarization-multiplexed signals.
Keywords silicon photonics      polarization beam splitter      polarization splitter and rotator      mode (de)multiplexer      selective switch     
Corresponding Author(s): Yikai SU   
Online First Date: 28 March 2018    Issue Date: 02 April 2018
 Cite this article:   
Yong ZHANG,Yu HE,Qingming ZHU, et al. On-chip silicon polarization and mode handling devices[J]. Front. Optoelectron., 2018, 11(1): 77-91.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-018-0772-6
https://academic.hep.com.cn/foe/EN/Y2018/V11/I1/77
Fig.1  Schematic structure of the proposed GACC-based PBS. (a) 3D view; (b) top view. Simulated power distributions for (c) TE-polarized light inputs, (d) TM-polarized light inputs [37]
Fig.2  (a) SEM image of a fabricated GACC-based PBS with corrugations period number N = 80; (b) magnified micrograph of the gratings [37]
Fig.3  Measured transmission responses at the Cross and Thru ports for (a) TE-polarized and (b) TM-polarized light inputs, respectively [37]
Fig.4  (a) and (b) Schematic structure of the proposed bridged bent coupler PBS; (c) and (d) simulated power distributions in the PBS for the TE- and TM-polarized light inputs, respectively [40]
Fig.5  (a) SEM photo of a fabricated PBS based on a bridged bent directional coupler. Measured transmission responses at the Bar and Cross ports for (b) TE-polarized and (c) TM-polarized light inputs [40]
Fig.6  Schematic structure of the proposed silicon PSR based on a bent directional coupler. (a) 3D view; (b) top view. (c) and (d) Simulated power distributions at the plane of z = 0 for the TE- and TM-polarized light inputs, respectively. The four insets depict the mode distributions at the cross section of yz of Input and Output ports [45]
Fig.7  (a) SEM photo of a fabricated PSR based on a bent directional coupler; (b) magnified micrographs of the bent directional coupler. Measured and simulated transmission responses at the Cross and Thru ports for (c) TE-polarization and (d) TM-polarization [45]
Fig.8  Schematic structure of the SWG-PSR. (a) 3D view; (b) top view. Simulated power distributions of the SWG-PSR for (c) TE- and (d) TM-polarized light input, respectively [46]
Fig.9  (a) SEM photo of a fabricated PSR. Measured and simulated transmission responses for (b) TE-polarized and (c) TM-polarized light inputs, respectively. (d) Measured transmission responses of the PSRs with DWG of+50 and −50 nm [46]
Fig.10  Schematic structure of the proposed SWG-based mode multiplexer. (a) 3D view; (b) top view of the SWG-based directional coupler. Simulated power distributions of the SWG-based directional couplers for (c) TE1 and (d) TE2 modes multiplexing, respectively [54]
Fig.11  (a)−(c) SEM photos of a fabricated SWG-based three-mode (de)multiplexer; (d) measured transmission responses at output ports Oi (i = 1, 2, 3) with the light input from port I1, I2, I3, respectively [54]
Fig.12  Schematic structure of the 2 × 2 MPSS for 2 modes and 2 polarizations. As an example, the TE0 and TE1 channels of Input 1 and the TM0 and TM1 channels of Input 2 are routed to Output 1 and other channels are routed to Output 2 [62]
Fig.13  (a) Microscope photo of a fabricated MPSS chip; (b) magnified SEM images and microscope photos of a PBS, a mode multiplexer, waveguide crossings and a MZI switch [62]
Fig.14  Measured inter-modal crosstalk performances [62]
Fig.15  Measured intra-modal crosstalk performances [62]
Fig.16  (a) Experimental setup. ECL: external cavity laser. PC: polarization controller. MZM: Mach-Zehnder modulator. Tx-DSP: transmitter-digital signal processor. AWG: arbitrary waveform generator. EA: electrical amplifier. EDFA: erbium-doped fiber amplifier. VOA: variable optical attenuator. BPF: bandpass filter. PD: photodetector. DSO: digital storage oscilloscope. (b) BER versus channel. (c) BER curves versus received optical power [64]
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