Near-infrared carbon-implanted waveguides in Tb<sup>3+</sup>-doped aluminum borosilicate glasses

doi:10.1007/s12200-019-0869-6

Front. Optoelectron.

2019, Vol. 12

Issue (4) : 392-396 https://doi.org/10.1007/s12200-019-0869-6

RESEARCH ARTICLE

Near-infrared carbon-implanted waveguides in Tb³⁺-doped aluminum borosilicate glasses

Yue WANG¹, Jiaxin ZHAO¹, Qifeng ZHU¹, Jianping SHEN¹, Zhongyue WANG¹, Haitao GUO², Chunxiao LIU¹(

)

¹. College of Electronic and Optical Engineering, Nanjing University of Post and Telecommunications, Nanjing 210023, China
². State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences (CAS), Xi’an 710119, China

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Abstract

Ion implantation has played a unique role in the fabrication of optical waveguide devices. Tb³⁺-doped aluminum borosilicate (TDAB) glass has been considered as an important magneto-optical material. In this work, near-infrared waveguides have been manufactured by the (5.5+ 6.0) MeV C³⁺ ion implantation with doses of (4.0+ 8.0) × 10¹³ ions·cm⁻² in the TDAB glass. The modes propagated in the TDAB glass waveguide were recorded by a prism-coupling system. The ﬁnite-difference beam propagation method (FD-BPM) was carried out to simulate the guiding characteristics of the TDAB glass waveguide. The TDAB glass waveguide allows the light propagation with a single-mode at 1.539 mm and can serve as a potential candidate for future waveguide isolators.

Keywords Tb³⁺-doped aluminum borosilicate (TDAB) glass optical waveguide ion implantation

Corresponding Author(s): Chunxiao LIU

Online First Date: 06 May 2019 Issue Date: 30 December 2019

Cite this article:

Yue WANG,Jiaxin ZHAO,Qifeng ZHU, et al. Near-infrared carbon-implanted waveguides in Tb³⁺-doped aluminum borosilicate glasses[J]. Front. Optoelectron., 2019, 12(4): 392-396.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-019-0869-6
https://academic.hep.com.cn/foe/EN/Y2019/V12/I4/392

Fig.1 Schematic of a waveguide formation by an ion implantation method. The inset is the photograph of the polished TDAB glass

Fig.2 Schematic of the set-up for the prism coupling method

Fig.3 Vacancy distribution versus the implantation depth for (5.5+ 6.0) MeV C³⁺ ions implanted into the TDAB glass

Fig.4 Relative light intensity versus effective RI for the double-energy carbon ion implanted TDAB glass and the inset is the RI of the unimplanted TDAB glass

Fig.5 Simulated guided mode intensity profile for the double-energy carbon ion implanted TDAB glass waveguide

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