Review of fabrication methods of large-area transparent graphene electrodes for industry

doi:10.1007/s12200-020-1011-5

Front. Optoelectron.

2020, Vol. 13

Issue (2) : 91-113 https://doi.org/10.1007/s12200-020-1011-5

REVIEW ARTICLE

Review of fabrication methods of large-area transparent graphene electrodes for industry

Petri MUSTONEN(

), David M. A. MACKENZIE, Harri LIPSANEN

Department of Electronics and Nanoengineering, Aalto University, Aalto FI-00076, Finland

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Abstract

Graphene is a two-dimensional material showing excellent properties for utilization in transparent electrodes; it has low sheet resistance, high optical transmission and is flexible. Whereas the most common transparent electrode material, tin-doped indium-oxide (ITO) is brittle, less transparent and expensive, which limit its compatibility in flexible electronics as well as in low-cost devices. Here we review two large-area fabrication methods for graphene based transparent electrodes for industry: liquid exfoliation and low-pressure chemical vapor deposition (CVD). We discuss the basic methodologies behind the technologies with an emphasis on optical and electrical properties of recent results. State-of-the-art methods for liquid exfoliation have as a figure of merit an electrical and optical conductivity ratio of $43.5$ , slightly over the minimum required for industry of $35$ , while CVD reaches as high as $419$ .

Keywords transparent electrodes graphene liquid exfoliation chemical vapor deposition (CVD)

Corresponding Author(s): Petri MUSTONEN

Online First Date: 13 July 2020 Issue Date: 21 July 2020

Cite this article:

Petri MUSTONEN,David M. A. MACKENZIE,Harri LIPSANEN. Review of fabrication methods of large-area transparent graphene electrodes for industry[J]. Front. Optoelectron., 2020, 13(2): 91-113.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-020-1011-5
https://academic.hep.com.cn/foe/EN/Y2020/V13/I2/91

Fig.1 (a) A possible route for cavitation-bubble induced liquid exfoliation of graphite to graphene. Adapted from Ref. [³²]. (b) High-speed shear mixing setup with a rotor, stator and mixing head visible. Adapted from Ref. [³³]

Fig.2 (a) Reduced graphene oxide spray-coated on a 4-inch quartz wafer. Adapted from Ref. [⁶⁶]. (b) Rod-coated room-temperature reduced graphene oxide transferred on a flexible PET substrate. Adapted from Ref. [⁶⁹]. (c) Scheme for Langmuir-Blodgett method where a graphene film forms at the air-water-interface. The substrate is pulled upwards while the film is under steady compression. The film adheres to the substrate as it is pulled, and a monolayer transfer is achieved. Adapted from Ref. [⁴¹]

R_s/(Ω·sq⁻¹)	T/%	$σ DC / σ OP$	annealing/°C	exfoliation method	Ref.
100	90	35	–	–	minimum industry requirment [⁷⁰]
22500	62	0.03	250	surfactant+ sonication	[⁷¹]
40000	78	0.036	400^a)	GO+ sonication	[⁶⁸]
5100	42	0.069	250	sonication	[³⁵]
6000	60	0.11	400^a)	GO+ sonication	[⁶⁴]
6000	70	0.16	–	surfactant+ sonication	[⁴⁰]
1500	44	0.25	–	shear	[⁵²]
3200	70	0.30	600	electrochemical	[⁵⁸]
4000	76	0.32	500	surfactant+ sonication	[⁷²]
5000	80	0.32	800	surfactant+ GO+ sonication	[⁶⁵]
1000	47	0.41	500	surfactant+ sonication	[⁷²]
1680	65	0.46	–	GO+ sonication	[⁶⁹]
4000	82	0.56	1100	GO+ sonication	[⁶⁸]
2000	74	0.58	400+1100^a)	GO+ sonication	[⁶⁴]
550	48	0.78	600	electrochemical	[⁵⁸]
1700	75	0.72	–	GO	[⁶⁷]
2200	84	0.94	1100	GO+ sonication	[⁶⁶]
930	75	1.3	300	intercalation	[⁴¹]
668	80	2.39	350	surfactant+ sonication	[⁵⁰]
1100	89	2.86	700	GO	[⁶⁷]
440	76	2.9	400	electrochemical	[⁵⁵]
600	86	4.01	400+1100	intercalation+ GO	[¹⁵]
778	90	4.5	1000	surfactant+ sonication	[⁴⁸]
330	87	4.8	300	electrochemical	[⁵⁶]
459	90	7.59	400+1100^b)	intercalation+ GO	[¹⁵]
260	85	8.6	350	shear	[⁴³]
657	96	13.9	450	electrochemical	[⁵⁴]
210^a)	96	43.5	450	electrochemical	[⁵⁴]

Tab.1 Summary of liquid exfoliated graphene based transparent electrodes, where

R s, ? T

, and

σ DC / σ OP

refer to sheet resistance, transmittance (at 550 nm) and figure of merit, respectively. Annealing column mentions whether high-temperature annealing is done and at what temperature. Exfoliation method explains which method is used and whether surfactants are used; if only GO is mentioned, then no agitation is used for exfoliation

Fig.3 (a) Schematic picture of a horizontal quartz furnace where gases flow laterally over the substrate in a reaction zone surrounded by heating elements. (b) Simplified scheme of graphene growth in CVD. Hydrocarbons adsorb on the surface (1), dehydrogenate (2), nucleate and grow (3), diffuse to bulk if high carbon soluble substrate (4), diffuse out (5), and segregate (6). Adapted from Ref. [⁸⁴]

Fig.4 Defect healing scheme by Park et al., where gold nanoparticles are electroplated onto defected areas, increasing their conductivity. Adapted from Ref. [¹⁰⁹]. (a) Schematic figure on where the gold nanoparticles coalesce after electroplating process. (b) Electroplating scheme of the gold nanoparticles

Fig.5 (a) Schematic of electrical injection of nickel atoms as p-type dopant by Chae et al., made with an AlN buffer layer. Adapted from Ref. [¹⁴³]. (b) Chlorine doping of graphene in ICP by Pham et al., with two metal meshes to confine low energy radicals and protect the graphene layer. Adapted from Ref. [¹⁶]

R_s/(Ω·sq⁻¹)	T/%	$σ DC / σ OP$	R_change/%	substrate	dopant (n/p)	Ref.
100	90	35	–	–	–	minimum industry requirement [⁷⁰]
3600	85.7	0.66	–	flexible glass	–	[¹³⁴]^a)
1645	81	1.03	–	quartz	–	[¹⁰⁴]
1300	80	1.24	–	quartz	–	[¹³⁶]^a)
1170	88	2.44	–	PET	–	[¹⁰³]
661	83.7	3.09	–	glass	–	[¹³⁵]^a)
600	86	4.01	37	SiO₂ (R_s)/glass (T)	Au₂S (p)	[¹³⁹]
230	71	4.39	–	PET	–	[¹⁴⁵]
280	76	4.58	–	quartz	–	[⁹⁸]
700	90	4.98	–	SiO₂ (R_s)/glass (T)	–	[¹⁴⁶]
350	83^b)	5.52	–	–	pyridine (n)^c)	[¹⁴⁷]
445	87	5.87	47	SiO₂ (R_s)/PET (T)	AuCl₃ (p)	[¹⁴⁸]
820	93	6.22	14	SiO₂ (R_s)/glass (T)	Au(OH)₃ (p)	[¹³⁹]
1150	97	10.7	–	glass	–	[¹⁴⁹]
200	86.7	12.7	87	EVA+PET	HNO₃ (p)	[¹⁵⁰]
530	95	13.7	44	SiO₂ (R_s)/glass (T)	AuBr₃ (p)	[¹³⁹]
350	93	14.6	52	–	RhCl₃ (p)	[¹⁴⁰]
150	87	17.4	66	SiO₂ (R_s)/PET (T)	AuCl₃ (p)	[¹⁴⁸]
220	91	17.8	70	–	AuCl₃ (p)	[¹⁴⁰]
500	96	18.3	32	–	HNO₃ (p)	[¹⁴⁰]
118^d)	84.9	18.7	56	glass	CsF (n)	[¹⁵¹]
129	88	22.1	70	SiO₂ (R_s)/sapphire (T)	TFSA (p)^e)	[¹⁵²]
550	97	22.3	–	PVDF^f)	–	[¹⁵³]
380	96	24.1	42	glass	hydrazine (n)	[¹⁴¹]
618	97.5	24.1	–	glass	–	[¹³⁷]^a)
500	97.1	25.4	–	quartz	–	[¹⁵⁴]
299	95.7	28.4	62	SiO₂ (R_s)/quartz (T)	HNO₃ (p)	[¹⁰⁵]
81	85.6	29	–	PES^g)	–	[¹³⁸]^a)
300	96	30.5	68	SiO₂ (R_s)/glass (T)	AuCl₃(p)	[¹³⁹]
216	95	33.6	70	quartz	Ni (p)^h)	[¹⁴³]
367	97.3	37.3	–	PET	–	[¹⁰¹]
215	96	42.5	44	SiO₂ (R_s)/glass (T)	Au NP (p)	[¹⁰⁹]
320	98	58.0	–	cellulose	–	[¹⁰⁷]
50	89	62.8	76	glass	hydrazine (n)	[¹⁴¹]
305	98.2	67.7	49	PET	Cl plasma (p)	[¹⁶]
30^d)	90	116	25	SiO₂ (R_s)/PET (T)	HNO₃ (p)	[¹⁰⁶]
118ⁱ⁾	97.3	116	80	PET	Cl plasma (p)	[¹⁶]
115	97.5	135	50	SiO₂ (R_s)/PET (T)	HNO₃ (p)	[¹⁰⁶]
25	96.5	419	83	parylene-C	HNO₃ (p)	[¹⁰⁸]

Tab.2 Summary of different graphene based transparent electrodes, where R_s, T,

σ DC / σ OP

and R_change refer to sheet resistance, transmittance (at 550 nm unless otherwise specified), figure of merit and decrease of sheet resistance due to doping, respectively. Substrate refers to the substrate where R_s and T are measured on, if two substrates are given, then their corresponding measurements are given in brackets after the substrate

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