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Front. Optoelectron.    2020, Vol. 13 Issue (3) : 246-255    https://doi.org/10.1007/s12200-020-1050-y
REVIEW ARTICLE
Possible top cells for next-generation Si-based tandem solar cells
Shuaicheng LU, Chao CHEN(), Jiang TANG
Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
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Abstract

Si-based solar cells, which have the advantages of high efficiency, low manufacturing costs, and outstanding stability, are dominant in the photovoltaic market. Currently, state-of-the-art Si-based solar cells are approaching the practical limit of efficiency. Constructing Si-based tandem solar cells is one available pathway to break the theoretical efficiency limit of single-junction silicon solar cells. Various top cells have been explored recently in the construction of Si-based tandem devices. Nevertheless, many challenges still stand in the way of extensive commercial application of Si-based tandem solar cells. Herein, we summarize the recent progress of representative Si-based tandem solar cells with different top cells, such as III-V solar cells, wide-bandgap perovskite solar cells, cadmium telluride (CdTe)-related solar cells, Cu(In,Ga)(Se,S)2 (CIGS)-related solar cells, and amorphous silicon (a-Si) solar cells, and we analyze the main bottlenecks for their next steps of development. Subsequently, we suggest several potential candidate top cells for Si-based tandem devices, such as Sb2S3, Se, CdSe, and Cu2O. These materials have great potential for the development of high-performance and low-cost Si-based tandem solar cells in the future.
Keywords photovoltaic market      Si-based solar cell      efficiency limit      tandem      top cell     
Corresponding Author(s): Chao CHEN   
Just Accepted Date: 30 June 2020   Online First Date: 20 July 2020    Issue Date: 27 September 2020
 Cite this article:   
Shuaicheng LU,Chao CHEN,Jiang TANG. Possible top cells for next-generation Si-based tandem solar cells[J]. Front. Optoelectron., 2020, 13(3): 246-255.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-020-1050-y
https://academic.hep.com.cn/foe/EN/Y2020/V13/I3/246
Fig.1  (a) Evolution of global cumulative installed capacity and percentage of global annual production of three major photovoltaic technologies: thin-film, multi-Si, and mono-Si. Adapted from Refs. [1,2]. (b) Photovoltaic module price evolution versus cumulative production. Adapted from Ref. [2]. (c) Record efficiencies of c-Si solar cells and their theoretical efficiency limits [3–5]. (d) Theoretical efficiency limit of four-terminal tandem solar cells as a function of the bandgaps of top and bottom cells based on the Shockley–Queisser limit
device structure PCE/% VOC/V JSC/(mA·cm−2) FF/% area/cm2 test center, date note
GaAs//Si (1.42//1.12 eV) 32.82 1.092//0.683 28.90//11.07 85.0//79.2 1.003 NREL, 12/2016 NREL/CSEM/EPFL, 4T [15]
GaInP//Si (1.81//1.12 eV) 32.45 1.454//0.694 15.78//23.11 87.0//77.9 1.005 NREL, 12/2016 NREL/CSEM/EPFL, 4T [15]
GaAsP/Si (1.72/1.12 eV) 20.1 1.673 14.94 80.3 3.940 NREL, 05/2018 OSU/SolAero/UNSW, 2T [19]
AlGaAs/Si (1.6/1.12 eV) 25.2 1.55 27.9 58 1 not certified, 04/2012 UTokyo, 2T [20]
GaInP/GaAs//Si(1.81/1.42//1.12 eV) 35.91 2.520//0.681 13.61//11.03 87.5//78.5 1.002 NREL, 02/2017 NREL/CSEM/EPFL, 4T [15]
GaInP/AlGaAs/Si(1.90/1.43/1.12 eV) 34.1 3.177 12.4 86.4 3.987 FhG-ISE, 08/2019 FhG-ISE, 2T [7,21]
GaInP/GaAs/Si(1.90/1.43/1.12 eV) 24.3 2.662 12.2 74.5 3.987 FhG-ISE, 06/2019 FhG-ISE, 2T [7,22]
perovskite/Si 28.0 1.802 19.75 78.7 1.03 NREL, 12/18 Oxford PV, 2T [7]
perovskite/Si(1.67/1.12 eV, CsFAMAPbIBrCl) 27.13
(26.08)		 1.886
(1.87)		 19.12
(18.4)		 75.3
(74.9)		 1
(0.999)		 not certified, 2019
(NREL, 08/2019)		 CU/NREL/USTC, 2T [16]
perovskite/Si(1.68/1.12 eV, CsMAFAPbIBr) 25.71 1.781 19.07 75.36 0.832 FhG-ISE, 03/2020 UofT/KAUST/NREL/SDSU, 2T [23]
perovskite/Si(1.63/1.12 eV, CsFAMAPbIBr) 25.43 1.792 19.02 74.6 1.088 FhG-ISE, 02/2019 HZB/Oxf/Oxford PV, 2T [24]
perovskite/Si(1.6/1.12 eV, CsFAPbIBr) 25.24 1.788 19.53 73.1 1.419 FhG-ISE, 06/2018 EPFL/CSEM, 2T [25]
perovskite//Si(1.72//1.12 eV, CsFAPbIBr) 27.1 1.22//0.678 15.4//24.1 70.1//81.2 0.13 not certified, 12/2018 IMEC/KU Leuven/UG/TU/e, 4T [26]
CdZnTe/Si (1.78/1.12 eV) 16.8 1.75 16 60 NA not certified, 01/2010 EPIR, 2T [27,28]
CuGaSe2/Si(1.7/1.12 eV) 5.1 1.32 9.0 43 NA NREL, 03/2003 NREL, 2T [29]
CuGaSe2/Si(1.7/1.12 eV) 9.7 1.328 12.3 59.4 0.5 not certified, 11/2017 KIST/UST [30]
a-Si//Si(1.7//1.12 eV) 16.8 0.867//0.545 13.4//23.2 61.0//76.6 0.033 not certified, 05/1990 Osaka University, 4T [31]
a-Si/Si(1.7/1.12 eV) 15.04 1.478 16.17 63.0 0.065 not certified, 05/1990 Osaka University, 2T [31]
Tab.1  Summary of notable results on Si-based tandem solar cells. All these solar cells were characterized under a AM 1.5G spectrum (1000 W/m2). The double slash (//) means that subcells are mechanically stacked, whereas a single slash (/) denotes that subcells are integrated by monolithic growth. 4T and 2T?are abbreviations for four-terminal and two-terminal tandem structures, respectively. NA means that the data are not available
Fig.2  Schematic of the screening process for potential candidates for the development of Si-based tandem solar cells
material Eg/eV PCE/% VOC/V JSC/(mA·cm−2) FF/% description
Sb2S3 1.7 7.5 0.711 16.1 65.0 chemical bath deposition [53]
Se 1.95 6.51 0.969 10.6 63.4 thermal evaporation [54]
CdSe 1.72 ~6 0.65 18 50 vacuum evaporation [55]
Cu2O 2.1 8.1 1.2 10.4 65 Cu sheet oxidization [56–58]
Tab.2  List of potential candidates for use in Si-based tandem solar cells
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