Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line

doi:10.1007/s12200-022-00005-8

Front. Optoelectron.

2022, Vol. 15

Issue (1) : 13 https://doi.org/10.1007/s12200-022-00005-8

RESEARCH ARTICLE

Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line

Galina Georgieva¹(

), Christian Mai², Pascal M. Seiler^1,², Anna Peczek³, Lars Zimmermann^1,²

¹. Hochfrequenztechnik-Photonik/Siliziumphotonik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin, Germany
². IHP—Leibnitz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
³. IHP Solutions GmbH, Im Technologiepark 7, 15236 Frankfurt (Oder), Germany

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Abstract

In this paper, we report on polarization combining two-dimensional grating couplers (2D GCs) on amorphous Si:H, fabricated in the backend of line of a photonic BiCMOS platform. The 2D GCs can be used as an interface of a hybrid silicon photonic coherent transmitter, which can be implemented on bulk Si wafers. The fabricated 2D GCs operate in the telecom C-band and show an experimental coupling efficiency of − 5 dB with a wafer variation of ± 1.2 dB. Possibilities for efficiency enhancement and improved performance stability in future design generations are outlined and extension toward O-band devices is also investigated.

Keywords Hybrid integration Photonic BiCMOS Amorphous silicon Two-dimensional grating coupler (2D GC) Dual-polarization coherent communication Silicon photonics

Corresponding Author(s): Galina Georgieva

Issue Date: 06 May 2022

Cite this article:

Galina Georgieva,Christian Mai,Pascal M. Seiler, et al. Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line[J]. Front. Optoelectron., 2022, 15(1): 13.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-022-00005-8
https://academic.hep.com.cn/foe/EN/Y2022/V15/I1/13

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