Van der Waals epitaxial growth and optoelectronics of a vertical MoS<sub>2</sub>/WSe<sub>2</sub> p–n junction

doi:10.1007/s12200-022-00041-4

Front. Optoelectron.

2022, Vol. 15

Issue (4) : 41 https://doi.org/10.1007/s12200-022-00041-4

RESEARCH ARTICLE

Van der Waals epitaxial growth and optoelectronics of a vertical MoS₂/WSe₂ p–n junction

Yu Xiao¹, Junyu Qu¹, Ziyu Luo¹, Ying Chen¹, Xin Yang¹, Danliang Zhang², Honglai Li¹, Biyuan Zheng¹, Jiali Yi¹, Rong Wu¹, Wenxia You¹, Bo Liu¹, Shula Chen¹(

), Anlian Pan¹(

)

¹. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
². School of Materials Science and Engineering, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p–n junction WSe₂/MoS₂ produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p–n junction exhibits bipolar behaviors and a mobility of 9 cm²/(V·s). In addition, the photodetector based on MoS₂/WSe₂ heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 10¹¹ Jones, on/off ratio of 10⁴), which benefited from the built-in electric field across the interface. The direct growth of TMDs p–n vertical heterostructures may offer a novel platform for future optoelectronic applications.

Keywords MoS₂ WSe₂ Chemical vapor deposition (CVD) Vertical heterostructure Optoelectronic transistor

Corresponding Author(s): Shula Chen,Anlian Pan

Issue Date: 26 October 2022

Cite this article:

Yu Xiao,Junyu Qu,Ziyu Luo, et al. Van der Waals epitaxial growth and optoelectronics of a vertical MoS₂/WSe₂ p–n junction[J]. Front. Optoelectron., 2022, 15(4): 41.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-022-00041-4
https://academic.hep.com.cn/foe/EN/Y2022/V15/I4/41

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