Picosecond dissipative soliton generation from an ytterbium-doped fiber laser based on a BP/SnSe<sub>2</sub>-PVA mixture saturable absorber

doi:10.1007/s12200-023-00074-3

Front. Optoelectron.

2023, Vol. 16

Issue (3) : 19 https://doi.org/10.1007/s12200-023-00074-3

RESEARCH ARTICLE

Picosecond dissipative soliton generation from an ytterbium-doped fiber laser based on a BP/SnSe₂-PVA mixture saturable absorber

Yuting Ouyang¹, Jiayu Zhang¹, Wanggen Sun², Mengxiao Li¹, Tao Chen¹, Haikun Zhang¹(

), Wenjing Tang¹(

), Wei Xia¹

¹. School of Physics and Technology, University of Jinan, Jinan 250022, China
². Shandong Huaguang Optoelectronics Co. Ltd., Jinan 250101, China

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Abstract

Stable picosecond dissipative soliton pulses were observed in an ytterbium-doped fiber laser employing a high-quality mixture of BP/SnSe₂-PVA saturable absorber (SA). The modulation depth, saturation intensity, and non-saturable loss of the mixture of BP/SnSe₂-PVA SA were measured with values of 5.98%, 18.37 MW/cm², and 33%, respectively. Within the pump power range of 150–270 mW, stable dissipative soliton pulses were obtained with an output power of 1.68–4 mW. When the minimum pulse duration is 1.28 ps, a repetition rate of 0.903 MHz, center wavelength of 1064.38 nm and 3 dB bandwidth of 2 nm were obtained. The maximum pulse energy of 4.43 nJ and the signal-to-noise ratio up to 72 dB were achieved at pump power of 270 mW. The results suggest that the BP/SnSe₂-PVA mixture SA has outstanding nonlinear saturable absorption characteristics and broad ultrafast laser applications.

Keywords Dissipative soliton Ytterbium-doped fiber laser Mixture of BP/SnSe₂-PVA Mode-locking

Corresponding Author(s): Haikun Zhang,Wenjing Tang

About author: Peng Lei and Charity Ngina Mwangi contributed equally to this work.

Issue Date: 26 October 2023

Cite this article:

Yuting Ouyang,Jiayu Zhang,Wanggen Sun, et al. Picosecond dissipative soliton generation from an ytterbium-doped fiber laser based on a BP/SnSe₂-PVA mixture saturable absorber[J]. Front. Optoelectron., 2023, 16(3): 19.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-023-00074-3
https://academic.hep.com.cn/foe/EN/Y2023/V16/I3/19

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