Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics

doi:10.1007/s12200-023-00082-3

Front. Optoelectron.

2023, Vol. 16

Issue (3) : 28 https://doi.org/10.1007/s12200-023-00082-3

RESEARCH ARTICLE

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics

Jungang He^1,²(

), You Ge¹, Ya Wang², Mohan Yuan¹, Hang Xia¹, Xingchen Zhang¹, Xiao Chen¹, Xia Wang¹, Xianchang Zhou¹, Kanghua Li²(

), Chao Chen², Jiang Tang²

¹. Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430205, China
². Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China

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Abstract

Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.

Keywords Zinc oxide Surface passivation Band alignment Quantum-dot solar cells

Corresponding Author(s): Jungang He,Kanghua Li

About author: Peng Lei and Charity Ngina Mwangi contributed equally to this work.

Issue Date: 08 November 2023

Cite this article:

Jungang He,You Ge,Ya Wang, et al. Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics[J]. Front. Optoelectron., 2023, 16(3): 28.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-023-00082-3
https://academic.hep.com.cn/foe/EN/Y2023/V16/I3/28

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