Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

doi:10.1007/s12200-024-00114-6

2024, Vol. 17

Issue (1) : 10 https://doi.org/10.1007/s12200-024-00114-6

Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Jian Yin¹, David Hwang², Hossein Zamani Siboni², Ehsanollah Fathi², Reza Chaji², Dayan Ban¹(

)

¹. Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of Waterloo, Waterloo, ON N2L 3G1, Canada
². Vuereal InC, 440 Philip Street, Unit 100, Waterloo, ON N2L 5R9, Canada

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Corresponding Author(s): Dayan Ban

Issue Date: 24 April 2024

Cite this article:

Jian Yin,David Hwang,Hossein Zamani Siboni, et al. Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes[J]. Front. Optoelectron., 2024, 17(1): 10.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-024-00114-6
https://academic.hep.com.cn/foe/EN/Y2024/V17/I1/10

1	J. Yin,, D. Hwang,, H.Z. Siboni,, et al.: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes. Front. Optoelectron. 17, 8 (2024). https://doi.org/10.1007/s12200-024-00111-9

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