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Front. Optoelectron.    2022, Vol. 15 Issue (1) : 7    https://doi.org/10.1007/s12200-022-00006-7
MINI REVIEW
Quantum prospects for hybrid thin-film lithium niobate on silicon photonics
Jeremy C. Adcock(), Yunhong Ding()
Center for Silicon Photonics for Optical Communication, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
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Abstract

Photonics is poised to play a unique role in quantum technology for computation, communications and sensing. Meanwhile, integrated photonic circuits—with their intrinsic phase stability and high-performance, nanoscale components—offer a route to scaling. However, each integrated platform has a unique set of advantages and pitfalls, which can limit their power. So far, the most advanced demonstrations of quantum photonic circuitry has been in silicon photonics. However, thin-film lithium niobate (TFLN) is emerging as a powerful platform with unique capabilities; advances in fabrication have yielded loss metrics competitive with any integrated photonics platform, while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast modulation. In this short review, we explore the prospects of dynamic quantum circuits—such as multiplexed photon sources and entanglement generation—on hybrid TFLN on silicon (TFLN/Si) photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow.
Keywords Quantum photonics      Quantum information      Quantum communications      Lithium niobate (LN)      Silicon photonics     
Corresponding Author(s): Jeremy C. Adcock,Yunhong Ding   
Issue Date: 06 May 2022
 Cite this article:   
Jeremy C. Adcock,Yunhong Ding. Quantum prospects for hybrid thin-film lithium niobate on silicon photonics[J]. Front. Optoelectron., 2022, 15(1): 7.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-022-00006-7
https://academic.hep.com.cn/foe/EN/Y2022/V15/I1/7
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