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Frontiers of Optoelectronics

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Front. Optoelectron.    2023, Vol. 16 Issue (4) : 42    https://doi.org/10.1007/s12200-023-00097-w
RESEARCH ARTICLE
Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response
Biyuan Zheng1, Xingxia Sun1, Weihao Zheng2, Chenguang Zhu1, Chao Ma1, Anlian Pan1, Dong Li1(), Shengman Li1,3()
1. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
2. College of Advanced Interdisciplinary Studies and Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
3. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
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Abstract

Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS2) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS2 monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS2 monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS2, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS2 monolayers (with low doping concentration) were demonstrated. The V-doped MoS2 monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.
Keywords Atomic substitution      V-doped MoS2      Distinct B-exciton      Broad spectral response     
Corresponding Author(s): Dong Li,Shengman Li   
Issue Date: 13 December 2023
 Cite this article:   
Biyuan Zheng,Xingxia Sun,Weihao Zheng, et al. Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response[J]. Front. Optoelectron., 2023, 16(4): 42.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-023-00097-w
https://academic.hep.com.cn/foe/EN/Y2023/V16/I4/42
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