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Circularly polarized light emission and detection by chiral inorganic semiconductors |
Zha Li1( ), Wancai Li2, Dehui Li2, Wei Tang3,4, Huageng Liang5, Huaibing Song6, Chao Chen2, Liang Gao1( ), Jiang Tang1,2 |
1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China 2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China 3. International Health Care Center, National Center for Global Health and Medicine, Tokyo 162-8655, Japan 4. Hepato-Biliary-Pancreatic Surgery Division, Department of Surgery, The University of Tokyo Hospital, Tokyo 113-8655, Japan 5. Department of Urology, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430074, China 6. Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China |
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Abstract Chiral inorganic semiconductors with high dissymmetric factor are highly desirable, but it is generally difficult to induce chiral structure in inorganic semiconductors because of their structure rigidity and symmetry. In this study, we introduced chiral ZnO film as hard template to transfer chirality to CsPbBr3 film and PbS quantum dots (QDs) for circularly polarized light (CPL) emission and detection, respectively. The prepared CsPbBr3/ZnO thin film exhibited CPL emission at 520 nm and the PbS QDs/ZnO film realized CPL detection at 780 nm, featuring high dissymmetric factor up to around 0.4. The electron transition based mechanism is responsible for chirality transfer.
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| Keywords
High dissymmetric factor
Circularly polarized light emission
Semiconductor
Hard template
Chirality
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Corresponding Author(s):
Zha Li,Liang Gao
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Issue Date: 13 June 2024
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