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Frontiers of Optoelectronics

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Front. Optoelectron.    2024, Vol. 17 Issue (2) : 19    https://doi.org/10.1007/s12200-024-00122-6
Impact of device resistances in the performance of graphene-based terahertz photodetectors
O. Castelló1,2, Sofía M. López Baptista1, K. Watanabe3, T. Taniguchi4, E. Diez5, J. E. Velázquez-Pérez1,5, Y. M. Meziani1,5, J. M. Caridad1,2(), J. A. Delgado-Notario1,5()
1. Department of Applied Physics, University of Salamanca, 37008 Salamanca, Spain
2. Unidad de Excelencia en Luz y Materia Estructurada (LUMES), University of Salamanca, 37008 Salamanca, Spain
3. Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
4. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
5. Nanotechnology Group, USAL–Nanolab, University of Salamanca, 37008 Salamanca, Spain
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Abstract

In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune (decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.
Keywords Graphene      THz      Photodetector      Field-effect transistor      Plasmonic     
Corresponding Author(s): J. M. Caridad,J. A. Delgado-Notario   
Issue Date: 19 June 2024
 Cite this article:   
O. Castelló,Sofía M. López Baptista,K. Watanabe, et al. Impact of device resistances in the performance of graphene-based terahertz photodetectors[J]. Front. Optoelectron., 2024, 17(2): 19.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-024-00122-6
https://academic.hep.com.cn/foe/EN/Y2024/V17/I2/19
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