Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

doi:10.1007/s11706-007-0055-4

Front. Mater. Sci.

2007, Vol. 1

Issue (3) : 304-308 https://doi.org/10.1007/s11706-007-0055-4

Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

NI Jie, LI Zhengcao, ZHANG Zhengjun

Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

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Abstract In this paper, we report a simple approach to synthesize silicon carbide (SiC) nanowires by solid phase source chemical vapor deposition (CVD) at relatively low temperatures. 3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates, and the nanowires are 20–80 nm in diameter and several μm in length, with a growth direction of [200]. The growth of the nanowires agrees well on vapor-liquid-solid (VLS) process and the film deposited on the substrates plays an important role in the formation of nanowires.

Issue Date: 05 September 2007

Cite this article:

LI Zhengcao,NI Jie,ZHANG Zhengjun. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition[J]. Front. Mater. Sci., 2007, 1(3): 304-308.

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https://academic.hep.com.cn/foms/EN/10.1007/s11706-007-0055-4
https://academic.hep.com.cn/foms/EN/Y2007/V1/I3/304

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