Preparation and photoluminescence of ZnO with
nanostructure by hollow-cathode discharge

doi:10.1007/s11706-008-0006-8

Front. Mater. Sci.

2008, Vol. 2

Issue (1) : 31-36 https://doi.org/10.1007/s11706-008-0006-8

Preparation and photoluminescence of ZnO with nanostructure by hollow-cathode discharge

BIAN Xin-chao, HUO Chun-qing, ZHANG Yue-fei, CHEN Qiang

Plasma Physical and Material Laboratory, Laboratory of Printing & Packaging Material and Technology Beijing Area Key Laboratory, Beijing Institute of Graphic Communication;

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Abstract Without the use of a metal catalyst in the process, ZnO with nanostructures was successfully prepared on Si (100) substrate by simple chemical vapor-deposition method. In our work, Ar was used as the plasma forming gas, O₂ was the reactive gas and metal zinc powder (99.99% purity) vaporized by cylinder hollow-cathode discharge (HCD) acted as the zinc source. The crystal structures of the as-synthesized ZnO nanostructures were characterized by X-ray diffraction (XRD); the ZnO sample growing on the wall of the crucible showed a ‘comb-like’ nanostructure, while the other one at the bottom of the crucible showed a ‘rod-like’ structure, which can be attributed to the difference of the oxygen content. The measurement on the photoluminescence (PL) performance of the ZnO nanostructures was carried out at room temperature. The results indicated that the ‘comb-shape’ ZnO nanomaterial possessed a remarkably strong ultraviolet emission peak centered at 388 nm, while ZnO nanorods, except better ultraviolet emission, also had relatively strong blue-green emission ranging from 470 to 600 nm due to the existence of oxygen vacancies. The growth mechanism of ZnO with nanostructures is also discussed in this paper.

Issue Date: 05 March 2008

Cite this article:

HUO Chun-qing,BIAN Xin-chao,ZHANG Yue-fei, et al. Preparation and photoluminescence of ZnO with nanostructure by hollow-cathode discharge[J]. Front. Mater. Sci., 2008, 2(1): 31-36.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-008-0006-8
https://academic.hep.com.cn/foms/EN/Y2008/V2/I1/31

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