Abstract Hafnium oxide (HfO2) thin films were deposited on Si (001) substrates by electron beam evaporation at various growth temperatures. It was found that the film was amorphous when deposited at temperatures lower than 200°C. It was polycrystalline when deposited at 250°C and 300°C. At temperatures above 400°C, it was grown preferably along the
Issue Date: 05 December 2008
Cite this article:
NI Jie,LI Zheng-cao,ZHANG Zheng-jun. Influence of deposition temperature on the structure
and optical properties of HfO thin films[J]. Front. Mater. Sci.,
2008, 2(4): 381-385.
Wilk G D, Wallace R M, Anthony J M . High-kappa gate dielectrics: Current status and materialsproperties considerations. Journal of AppliedPhysics, 2001, 89(10): 5243–5275. doi:10.1063/1.1361065
2
Robertson J . Highdielectric constant gate oxides for metal oxide Si transistors. Reports on Progress in Physics, 2006, 69(2): 327–396. doi:10.1088/0034-4885/69/2/R02
3
Aarik J, Mandar H, Kirm M, et al.. Optical characterization of HfO2 thin films grown by atomic layer deposition. Thin Solid Films, 2004, 466(1–2): 41–47. doi:10.1016/j.tsf.2004.01.110
4
Xing S, Zhang N L, Song Z T, et al.. Preparation of hafnium oxide thin film by electronbeam evaporation of hafnium incorporating a post-thermal process. Microelectronic Engineering, 2003, 66(1–4): 451–456. doi:10.1016/S0167-9317(02)00911-5
5
Zhang D W, Fan S H, Zhao Y N, et al.. High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation. Applied Surface Science, 2005, 243(1–4): 232–237. doi:10.1016/j.apsusc.2004.09.083
6
Wang Y J, Lin Z L, Cheng X L, et al.. Study of HfO2 thin filmsprepared by electron beam evaporation. Applied Surface Science, 2004, 228(1–4): 93–99. doi:10.1016/j.apsusc.2003.12.028
7
Al-Kuhaili M F, Durrani S M A, Khawaja E E . Characterization of hafnium oxide thin films preparedby electron beam evaporation. Journal ofPhysics D-Applied Physics, 2004, 37(8): 1254–1261. doi:10.1088/0022-3727/37/8/015
8
Nishide T, Honda S, Matsuura M, et al.. Surface, structural and optical properties ofsol-gel derived HfO2 films. Thin Solid Films, 2000, 371(1–2): 61–65. doi:10.1016/S0040-6090(00)01010-5
9
He G, Liu M, Zhu L Q, et al.. Effect of postdeposition annealing on the thermalstability and structural characteristics of sputtered HfO2 films on Si (100). SurfaceScience, 2005, 576(1–3): 67–75. doi:10.1016/j.susc.2004.11.042
10
Cho M H, Roh Y S, Whang C N, et al.. Thermal stability and structural characteristicsof HfO2 films on Si (100) grown by atomic-layerdeposition. Applied Physics Letters, 2002, 81(3): 472–474. doi:10.1063/1.1487923
11
Sayan S, Aravamudhan S, Busch B W, et al.. Chemical vapor deposition of HfO2 films on Si(100). Journal of Vacuum Science &Technology a-Vacuum Surfaces and Films, 2002, 20(2): 507–512. doi:10.1116/1.1450584
12
Aarik J, Aidla A, Kiisler A A, et al.. Influence of substrate temperature on atomiclayer growth and properties of HfO2 thin films. Thin Solid Films, 1999, 340(1–2): 110–116. doi:10.1016/S0040-6090(98)01356-X
13
Takahashi K, Funakubo H, Hino S, et al.. Effect of deposition temperature on the characteristicsof hafnium oxide films deposited by metalorganic chemical vapor depositionusing amide precursor. Journal of MaterialsResearch, 2004, 19(2): 584–589. doi:10.1557/jmr.2004.19.2.584
14
Duenas S, Castan H, Garcia H, et al.. Effect of growth temperature and postmetallizationannealing on the interface and dielectric quality of atomic layerdeposited HfO2 on p and n silicon. Journal of Applied Physics, 2004, 96(3): 1365–1372. doi:10.1063/1.1767622
15
Kukli K, Aarik J, Uustare T, et al.. Engineering structure and properties of hafniumoxide films by atomic layer deposition temperature. Thin Solid Films, 2005, 479(1–2): 1–11. doi:10.1016/j.tsf.2004.11.191
16
Dhar S, Rao M S R, Ogale S B, et al.. Growth of highly oriented HfO2 thin films of monoclinic phase on yttrium-stabilized ZrO2 and Sisubstrates by pulsed-laser deposition. Applied Physics Letters, 2005, 87(24): 241504. doi: 10.1063/1.2142088
17
Martinez F L, Toledano-Luque M, Gandia J J, et al.. Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering. Journal of Physics D – Applied Physics, 2007, 40(17): 5256–5265. doi:10.1088/0022-3727/40/17/037
