Surface-hardening effect of B implantation in 6H-SiC ceramics

doi:10.1007/s11706-009-0041-0

Front Mater Sci Chin

2009, Vol. 3

Issue (3) : 281-284 https://doi.org/10.1007/s11706-009-0041-0

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Surface-hardening effect of B implantation in 6H-SiC ceramics

Heng DU¹, Zheng-cao LI¹(

), Tian MA², Wei MIAO¹, Zheng-jun ZHANG¹

1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; 2. The Research Center of the China-Hemp Materials, The Quartermaster Equipment Institute of the General Logistics Department of PLA, Beijing 100082, China

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Abstract

This study was conducted on the surface-hardening effect of boron ion implantation in 6H-SiC ceramics. The SiC samples prepared by pressureless sintering were carefully polished, and 500 keV B⁺ implanted in 6H-SiC ceramics at room temperature and four implantation doses, namely, 1×10¹⁵, 5×10¹⁵, 1×10¹⁶, and 5×10¹⁶ cm^-2, were chosen. The implanted samples were analyzed by scanning electron microscope and Raman spectra. The Vickers hardness of the samples was evidently increased. The thickness of the damage layer was about 1 μm, which is consistent with the simulated results. The structure of the damage layer was different from the internal part and severely damaged at high doses.

Keywords 6H-SiC boron ion implantation surface-hardening

Corresponding Author(s): LI Zheng-cao,Email:zcli@tsinghua.edu.cn

Issue Date: 05 September 2009

Cite this article:

Heng DU,Zheng-cao LI,Tian MA, et al. Surface-hardening effect of B implantation in 6H-SiC ceramics[J]. Front Mater Sci Chin, 2009, 3(3): 281-284.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-009-0041-0
https://academic.hep.com.cn/foms/EN/Y2009/V3/I3/281

Tab.1 Numbers of samples and corresponding implanted energy and dosage

Fig.1 Vickers hardness of Samples 2, 8, and 9, whose flexural strengths were minimum, maximum, and medium among 12 tested samples of 6H-SiC ceramics after 500 keV B implantation at four different doses. The meanings of doses from 1 to 5 were non-implanted, 1×10, 5×10, 1×10, and 5×10 cm, respectively.

Fig.2 SEM images of the surface and the cross-section of non-implanted 6H-SiC ceramics; SEM images of the cross-section of 500 keV B 6H-SiC ceramics at 1×10, 5×10, 1×10, and 5×10 cm

Fig.3 Raman spectra of B implanted 6H-SiC ceramics at different implantation doses

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