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A review of crystallographic textures in chemical
vapor-deposited diamond films |
Tao LIU1,Dierk RAABE1,Wei-Min MAO2, |
1.Max-Planck-Institut für
Eisenforschung, Abteilung Mikrostrukturphysik und Umformtechnik, Max-Planck-Strasse
1, Düsseldorf 40237, Germany; 2.School of Materials Science
and Engineering, University of Science and Technology Beijing, Beijing
100083, China; |
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Abstract Diamond is one of the most important functional materials for film applications due to its extreme physical and mechanical properties, many of which depend on the crystallographic texture. The influence of various deposition parameters matters to the texture formation and evolution during chemical vapor deposition (CVD) of diamond films. In this overview, the texture evolutions are presented in terms of both simulations and experimental observations. The crystallographic textures in diamond are simulated based on the van der Drift growth selection mechanism. The film morphology and textures associated with the growth parameters α (proportional to the ratio of the growth rate along the〈100〉direction to that along the 〈111〉direction) are presented and determined by applying the fastest growth directions. Thick films with variations in substrate temperature, methane concentration, film thickness, and nitrogen addition were analyzed using high-resolution electron back-scattering diffraction (HR-EBSD) as well as X-ray diffraction (XRD), and the fraction variations of fiber textures with these deposition parameters were explained. In conjunction with the focused ion beam (FIB) technique for specimen preparation, the grain orientations in the beginning nucleation zones were studied using HR-EBSD (50nm step size) in another two sets of thin films deposited with variations in methane concentration and substrate material. The microstructures, textures, and grain boundary character were characterized. Based on the combination of an FIB unit for serial sectioning and HR-EBSD, diamond growth dynamics was observed using a 3D EBSD technique, with which individual diamond grains were investigated in 3D. Microscopic defects were observed in the vicinity of the high-angle grain boundaries by using the transmission electron microscopy (TEM) technique, and the advances of TEM orientation microscopy make it possible to identify the grain orientations in nano-crystalline diamond.
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Keywords
CVD diamond films
deposition parameters
texture
EBSD
van der Drift growth selection mechanism
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Issue Date: 05 March 2010
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Prelas M A, Popovici G, Bigelow L K. Handbook of Industrial Diamonds and Diamond Films. New York: Marcel Dekker Press, 1998
|
|
Clausing R E, Horton L L, Angus J C, et al. Diamond and Diamond-like Films and Coatings. New York: Plenum Press, 1991
|
|
Govindaraju N, Aleksov A, Li X, et al. Comparative study of textured diamond filmsby thermal conductivity measurements. AppliedPhysics A: Material Science and Process, 2006, 85(3): 331―335
doi: 10.1007/s00339-006-3697-7
|
|
McCurdy A K. Phonon conduction in elastically anisotropic cubic crystals. Physical Review B, 1982, 26(12): 6971―6986
doi: 10.1103/PhysRevB.26.6971
|
|
McCurdy A K, Maris H J, Elbaum C. Anisotropic heat conduction in cubic crystals in theboundary scattering regime. Physical ReviewB, 1970, 2(10): 4077―4083
doi: 10.1103/PhysRevB.2.4077
|
|
Su Q F, Xia Y B, Wang L J, et al. Influence of texture on optical and electricalproperties of diamond films. Vacuum, 2007, 81(5): 644―648
doi: 10.1016/j.vacuum.2006.09.005
|
|
Banaszak A, Fabisiak K, Kaczmarski M, et al. Paramagnetic defects in diamond films synthesizedby the hot filament chemical vapour deposition. Crystal Research and Technology, 2006, 41(6): 535―540
doi: 10.1002/crat.200510621
|
|
Avigal Y, Glozman O, Etsion I, et al. [100]-Textured diamond films for tribologicalapplications. Diamond and Related Materials, 1997, 6(2): 381―385
doi: 10.1016/S0925-9635(96)00625-5
|
|
Goudeau P, Vandenbulcke L, Met C, et al. X-ray diffraction analysis of residual stressesin smooth fined-grain diamond coatings deposited on TA6V alloys. Surface and Coatings Technology, 2005, 200(1―4): 170―173
doi: 10.1016/j.surfcoat.2005.02.082
|
|
Schade A, Rosiwal S M, Singer R F. Tribological behaviour of<100>and<111>fibre texturedCVD diamond films under dry planar sliding contact. Diamond and Related Materials, 2006, 15(10): 1682―1688
doi: 10.1016/j.diamond.2006.02.008
|
|
Himpsel F J, Knapp J A, Van Vechten J A, et al. Quantum photoyield of diamond(Ш)— A stable negative-affinity emitter. Physical Review B, 1979, 20(2): 624―627
doi: 10.1103/PhysRevB.20.624
|
|
van der Drift A. Evolutionaryselection: a principle governing growth orientation in vapour depositedlayers. Philips Research Reports, 1967, 22: 267―288
|
|
Wild Ch, Herres N, Koidl P. Texture formation in polycrystalline diamond films. Journal of Applied Physics, 1990, 68(3): 973―978
doi: 10.1063/1.346663
|
|
Smereka P, Li X Q, Russo G, et al. Simulation of faceted film growth in three dimensions:microstructure, morphology and texture. Acta Materialia, 2005, 53(4): 1191―1204
doi: 10.1016/j.actamat.2004.11.013
|
|
Mao W, Zhu H, Chen L, et al. Grain orientation dependence on distance tosurface of CVD diamond film. Materialsand Science Technology, 2005, 21(12): 1383―1386
doi: 10.1179/174328405X71567
|
|
Delclos S, Dorignac D, Phillipp F, et al. UHREM investigation of stacking fault interactionsin the CVD diamond structure. Diamond andRelated Materials, 1999, 8(2―5): 682―687
doi: 10.1016/S0925-9635(98)00255-6
|
|
Yin L W, Li M S, Cui J J, et al. Planar?defects?and?dislocations?in?HPHT?as-grown?diamond?crystals. Diamond and Related Materials, 2002, 11(2): 268―272
doi: 10.1016/S0925-9635(01)00690-2
|
|
Liu T, Raabe D, Mao W, et al. Microtexture and grain boundaries in freestandingCVD diamond films: Growth and twinning mechanisms. Advanced Functional Materials, 2009, 19(24): 3880―3891
doi: 10.1002/adfm.200901231
|
|
Liu T, Raabe D, Zaefferer S. A 3D tomographic EBSD analysis of a CVD diamond thinfilm. Science and Technology of AdvancedMaterials, 2008, 9: 035013 (6 pages)
|
|
Liu T, Raabe D. Influence of nitrogen dopingon growth rate and texture evolution of chemical vapor depositiondiamond films. Applied Physics Letters, 2009, 94(2): 021119 (3 pages)
|
|
Chen H W, Rudolph V. The 3-D structure of polycrystallinediamond film by electron backscattering diffraction (EBSD). Diamond and Related Materials, 2003, 12(10―11): 1633―1639
doi: 10.1016/S0925-9635(03)00187-0
|
|
Wild C, Koildl P, Muller-Sebert W, et al. Chemical vapour deposition andcharacterization of smooth {100}-faceted diamond films. Diamond and Related Materials, 1993, 2(2―4): 158―168
doi: 10.1016/0925-9635(93)90047-6
|
|
May P W. CVD diamond — a new technology for the future. Endeavour Magazine, 1995, 19(3): 101―106
doi: 10.1016/0160-9327(95)97494-S
|
|
Busch J V, Dismukes J P. Trends and market perspectivesfor CVD diamond. Diamond and Related Materials, 1994, 3(4―6): 295―302
doi: 10.1016/0925-9635(94)90175-9
|
|
Kobashi K. DiamondFilms. Amsterdam: Elsevier, 2005
|
|
Lu F X, Tang W Z, Huang T B, et al. Large area high quality diamond film depositionby high power DC arc plasma jet operating at gas recycling mode. Diamond Related Materials, 2001, 10(9―10): 1551―1558
doi: 10.1016/S0925-9635(01)00407-1
|
|
Zaefferer S, Wright S I, Raabe D. Three-dimensional orientation microscopy in a focusedion beam-scanning electron microscope: a new dimension of microstructurecharacterization. Metallurgical and MaterialsTransactions A, 2008, 39(2): 374―389
doi: 10.1007/s11661-007-9418-9
|
|
Konrad J, Zaefferer S, Raabe D. Investigation of orientation gradients around a hardLaves particle in a warm-rolled Fe3Al-based alloy using a 3D EBSD-FIBtechnique. Acta Materialia, 2006, 54(5): 1369―1380
doi: 10.1016/j.actamat.2005.11.015
|
|
Schmidt I, Benndorf C. Low temperature CVD diamonddeposition using halogenated precursors — deposition on lowmelting materials: Al, Zn and glass. Diamondand Related Materials, 2001, 10(3―7): 347―351
|
|
Kobashi K, Miyauchi S, Nishimura K, et al. Method for forming diamond films by vapor phasesynthesis. US Patent, 5358754, 1994
|
|
Zhu H X, Mao W M, Feng H P. Influence of methane concentration on crystal growingprocess in CVD free standing diamond films. Journal of Inorganic Materials, 2007, 22(3): 570―576 (in Chinese)
|
|
Williams B E, Kong H S, Glass J T. Electron microscopy of vapor phase deposited diamond. Journal of Materials Research, 1990, 5(4): 801―810
doi: 10.1557/JMR.1990.0801
|
|
Yan C S, Yogesh K, Vohra M N. Multiple twinning and nitrogen defect center in chemicalvapor deposited homoepitaxial diamond. Diamond and Related Materials, 1999, 8(11): 2022―2031
doi: 10.1016/S0925-9635(99)00148-X
|
|
Chu C J, Hauge R H, Margrave J L, et al. Mechanism of diamond growth by chemical vapordeposition on diamond (100), (111), and (110) surfaces: Carbon-13studies. Applied Physics Letters, 1992, 61(12): 1393―1395
doi: 10.1063/1.107548
|
|
Tang C J, Neves A J, Fernandes A H S. Influence of nucleation density on filmquality, growth rate and morphology of thick CVD diamond films. Diamond and Related Materials, 2003, 12(9): 1488―1494
doi: 10.1016/S0925-9635(03)00179-1
|
|
Clausing R E, Heatherly L, Horton L L, et al. Textures and morphologies of chemical vapordeposited (CVD) diamond. Diamond and RelatedMaterials, 1992, 1(5―6): 411―415
doi: 10.1016/0925-9635(92)90139-F
|
|
Meakin D, Stoemenos J, Miglierate D, et al. Structural studies of low-temperature low-pressurechemical deposited polycrystalline silicon. Journal of Applied Physics, 1987, 61(11): 5031―5037
doi: 10.1063/1.338325
|
|
Volmer M, Weber A. Nucleation of supersaturatedstructures. Zeitschrift für PhysikalischeChemie, 1926, 119: 277―301 (in German)
|
|
Steeds J W, Gilmore A, Bussmann K M, et al. On the nature of grain boundary defects in highquality CVD diamond films and their influence on physical properties. Diamond and Related Materials, 1999, 8(6): 996―1005
doi: 10.1016/S0925-9635(98)00425-7
|
|
Wu G, Zaefferer S. Advances in TEM orientationmicroscopy by combination of dark-field conical scanning and improvedimage matching. Ultramicroscopy, 2009, 109(11): 1317―1325
doi: 10.1016/j.ultramic.2009.06.002
|
|
Raabe D. Cellularautomata in materials science with particular reference to recrystallizationsimulation. Annual Review of MaterialsResearch, 2002, 32: 53―76
doi: 10.1146/annurev.matsci.32.090601.152855
|
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