Epitaxial growth of SrRuO<sub>3</sub> thin films by RF sputtering and study of surface morphology

doi:10.1007/s11706-010-0098-9

Front Mater Sci Chin

2010, Vol. 4

Issue (4) : 387-393 https://doi.org/10.1007/s11706-010-0098-9

RESEARCH ARTICLE

Epitaxial growth of SrRuO₃ thin films by RF sputtering and study of surface morphology

M. K. R. KHAN^1,2(

), M. ITO³, M. ISHIDA^2,3,4

1. Department of Physics, University of Rajshahi, Rajshahi-6205, Bangladesh; 2. Venture Business Laboratory, Toyohashi University of Technology, Tempakucho, Toyohashi, Aichi 441-8580, Japan; 3. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempakucho, Toyohashi, Aichi 441-8580, Japan; 4. JST-CREST, 4-1-8-Honcho, Kawaguchi, Saitama, Japan

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Abstract

We report on the epitaxial growth of SrRuO₃ (SRO) thin films on Pt (111)/γ-Al₂O₃ (111) nSi (111) substrates. The grown thin films are crystalline and epitaxial as suggested by RHEED and XRD experiments. With the use of γ-Al₂O₃ (001)/nSi (001) and γ-Al₂O₃ (111)/nSi (111) substrates, crystalline but not epitaxial films have grown successfully. This result implies that lattice mismatch between nSi and SRO prevents the epitaxial growth of SRO film directly on nSi. However, the buffer Pt (111) layer mitigates lattice mismatch that provides to grow epitaxial film on nSi of quality. Morphological study shows a good surface with moderate roughness. Film grown at 700°C is smoother than the film grown at 750°C, but the variation of temperature does not affect significantly on the epitaxial nature of the films.

Keywords RF-sputtering molecular beam epitaxy (MBE) X-ray diffraction (XRD) epitaxial Al₂O₃

Corresponding Author(s): KHAN M. K. R.,Email:fkrkhan@yahoo.co.uk

Issue Date: 05 December 2010

Cite this article:

M. ITO,M. ISHIDA,M. K. R. KHAN. Epitaxial growth of SrRuO₃ thin films by RF sputtering and study of surface morphology[J]. Front Mater Sci Chin, 2010, 4(4): 387-393.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-010-0098-9
https://academic.hep.com.cn/foms/EN/Y2010/V4/I4/387

Fig.1 RHEED patterns of SRO films on γ-AlO (001)/nSi (001) substrate: = 500°C; = 700°C; = 750°C; = 800°C

Fig.2 RHEED patterns of SRO films on γ-AlO (111)/nSi (111) substrate: 1.0 Pa; 5.0 Pa

Fig.3 RHEED patterns of SRO films on Pt (111)/γ-AlO (111)/nSi (111) substrate: = 700°C; = 750°C

Fig.4 2 scan of XRD patterns of SRO/γ-AlO (001)/nSi (001) films

Fig.5 2 scan of XRD patterns of SRO/γ-AlO (111)/nSi (111) films

Fig.6 2-Ω (°) scan of SRO/Pt (100)/γ-AlO (100)/nSi (100) and SRO/Pt (111)/γ-AlO (111)/nSi (111)

Fig.7 AFM images of SRO/Pt (111)/γ-AlO (111)/nSi (111) films: = 700°C and = 750°C

Fig.8 3-Dimentional AFM images of SRO/Pt (111)/γ-AlO (111)/nSi (111) films: = 700°C; = 750°C

Fig.9 SEM images of SRO film grown at = 700°C: magnification= 10 k; magnification= 20 k

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