Annealing effect on structural and magnetic properties of Tb and Cr co-implanted AlGaN

doi:10.1007/s11706-012-0180-6

Front Mater Sci

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Issue () : 366-370 https://doi.org/10.1007/s11706-012-0180-6

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Annealing effect on structural and magnetic properties of Tb and Cr co-implanted AlGaN

Chun-Hai YIN, Chao LIU(

), Dong-Yan TAO, Yi-Ping ZENG

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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Abstract

Unintentionally doped AlGaN layers, which were co-implanted with 400 keV Tb⁺ ions and 200 keV Cr⁺ ions at doses of 1.5×10¹⁵ cm^-2, have been rapid thermally annealed at 800°C and 900°C for 5 min in flowing N₂. Compared with Tb implanted AlGaN sample, the Tb and Cr co-implanted sample reveals a larger magnetic signal. In this work, the annealing effect on the structural and magnetic properties of Tb and Cr co-implanted AlGaN thin films have been studied. XRD and Raman scattering results indicate that no second phase presents in the thin films and most of the implantation induced defects can be removed by post-implantation annealing. Superconducting quantum interference device (SQUID) measurements show clear room temperature ferromagnetic behavior and an increase in the saturation magnetization as a result of annealing. The saturation magnetization of the 900°C annealed sample is about 15 times higher than that of the 800°C annealed sample.

Keywords diluted magnetic semiconductor (DMS) room temperature ferromagne-tism ion implantation III-nitride thin film

Corresponding Author(s): LIU Chao,Email:cliu@semi.ac.cn

Issue Date: 05 December 2012

Cite this article:

Chun-Hai YIN,Chao LIU,Dong-Yan TAO, et al. Annealing effect on structural and magnetic properties of Tb and Cr co-implanted AlGaN[J]. Front Mater Sci, 0, (): 366-370.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-012-0180-6
https://academic.hep.com.cn/foms/EN/Y0/V/I/366

Fig.1 XRD spectra of the as-implanted and 900°C annealed samples of AlGaN:(Tb+Cr). The inset shows the X-ray rocking curves of AlGaN (0002) peak of the above mentioned samples. XRD -2 scans of as-grown, as-implanted and annealed samples.

Fig.2 Raman spectra of the as-grown, as-implanted and annealed samples of AlGaN:(Tb+Cr).

Fig.3 Hysteresis loops for annealed samples of AlGaN:(Tb+Cr) at 300 K. The inset shows an expended region of the magnetic signals.

Fig.4 Magnetization curves for 900°C annealed samples of AlGaN:(Tb+Cr) and AlGaN:Tb at 300 K. The inset shows an expended region of the magnetic signals.

Tab.1 Magnetic parameters of annealed samples of AlGaN:(Tb+Cr) and AlGaN:Tb

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