GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

doi:10.1007/s11706-015-0286-8

Front. Mater. Sci.

2015, Vol. 9

Issue (2) : 151-155 https://doi.org/10.1007/s11706-015-0286-8

RESEARCH ARTICLE

GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

Qingpeng WANG¹,Jin-Ping AO^1,^*(

),Pangpang WANG²,Ying JIANG¹,Liuan LI¹,Kazuya KAWAHARADA¹,Yang LIU³

1. Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
2. Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
3. School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Download: PDF(897 KB) HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Keywords gallium nitride MOSFET recess gate dry etching

Corresponding Author(s): Jin-Ping AO

Online First Date: 21 April 2015 Issue Date: 23 July 2015

Cite this article:

Qingpeng WANG,Jin-Ping AO,Pangpang WANG, et al. GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate[J]. Front. Mater. Sci., 2015, 9(2): 151-155.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-015-0286-8
https://academic.hep.com.cn/foms/EN/Y2015/V9/I2/151

Fig.1 GaN MOSFET structure on an AlGaN/GaN heterostructure.

Fig.2 Long-channel ring-type GaN MOSFET pattern.

Fig.3 Current-voltage characteristics of the GaN MOSFET.

Fig.4 Transfer characteristics of devices etched by different gas.

Fig.5 Field-effect mobility characteristics of devices etched by different gas.

Fig.6 AFM height images of (a) SiO₂ and (b) PR, and amplitude images of (c) SiO₂ and (d) PR.

Fig.7 Recess profiles with SiO₂ and PR etching mask.

Fig.8 Transfer and field-effect mobility characteristics of devices with SiO₂ and PR mask.

1	Milligan J W, Sheppard S, Pribble W, . SiC and GaN wide bandgap device technology overview. Radar Conference, 2007 IEEE, 960–964
2	Christou A, Fantini F. Introduction to the Special Issue on GaN and related nitride compound device reliability. IEEE Transactions on Device and Materials Reliability, 2008, 8(2): 239
3	Niiyama Y, Ootomo S, Kambayashi H, . Normally-off operation GaN based MOSFETs for power electronics. CISC 2009, Annual IEEE, 2009, 1–4
4	Matocha K, Chow T P, Gutmann R J. High-voltage normally off GaN MOSFETs on sapphire substrates. IEEE Transactions on Electron Devices, 2005, 52(1): 6–10
5	Wang Q, Tamai K, Miyashita T, . Influence of dry recess process on enhancement-mode GaN metal–oxide–semiconductor field-effect transistors. Japanese Journal of Applied Physics, 2013, 52(1S): 01AG02
6	Ao J P, Yamaoka Y, Okada M, . Investigation on current collapse of AlGaN/GaN HFET by gate bias stress. IEICE Transactions on Electronics, 2008, 91(7): 1004–1008
7	Wang Q, Jiang Y, Miyashita T, . Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure. Solid-State Electronics, 2014, 99: 59–64
8	Ohmi T, Kotani K, Teramoto A, . Dependence of electron channel mobility on Si-SiO2 interface microroughness. Electron Device Letters, IEEE, 1991, 12(12): 652–654

Viewed

Full text

Abstract

Cited

Shared

Discussed