Photoluminescence and electrical properties of Er3+-doped Na0.5Bi4.5Ti4O15--Bi4Ti3O12 inter-growth ferroelectrics ceramics

doi:10.1007/s11706-017-0367-y

Front. Mater. Sci.

2017, Vol. 11

Issue (1) : 51-58 https://doi.org/10.1007/s11706-017-0367-y

RESEARCH ARTICLE

Photoluminescence and electrical properties of Er³⁺-doped Na_0.5Bi_4.5Ti₄O₁₅--Bi₄Ti₃O₁₂ inter-growth ferroelectrics ceramics

Yalin JIANG,Xiangping JIANG(

),Chao CHEN,Yunjing CHEN,Xingan JIANG,Na TU

Jiangxi Key Laboratory of Advanced Ceramic Materials, Department of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333001, China

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Abstract

Upconversion (UC) and electrical properties of Na_0.5Bi_8.5−_xEr_xTi₇O₂₇ (NBT–BIT–xEr, 0.00≤x≤0.25) ceramics were studied. Structural analysis revealed that a single inter-growth structured phase exists in all samples and the Er³⁺ ion substituting for Bi³⁺ at the A-site increases the orthorhombic distortion. Under the 980 nm laser excitation, two characteristic green emission bands and one red emission band were situated at 527, 548 and 670 nm, corresponding to the transitions ²H_11/2 → ⁴I_15/2, ⁴S_3/2 → ⁴I_15/2 and ⁴F_9/2 → ⁴I_15/2, respectively. The optimal photoluminescence (PL) were found in the NBT–BIT–0.20Er sample, and the emission color transforms from green to yellowish green. Temperature dependence of fluorescence intensity ratio (FIR) for NBT–BIT–0.20Er was measured ranging from 290 to 440 K and its maximum sensitivity was calculated to be about 0.0020 K⁻¹ at 290 K. Dielectric measurements indicated that T_C slightly increased simultaneously with the decrease of tanδ. Therefore, this ceramic has potential applications for high-temperature multifunctional devices.

Keywords inter-growth structure photoluminescence (PL) electrical properties multifunctional materials

Corresponding Author(s): Xiangping JIANG

Online First Date: 12 January 2017 Issue Date: 22 January 2017

Cite this article:

Yalin JIANG,Xiangping JIANG,Chao CHEN, et al. Photoluminescence and electrical properties of Er³⁺-doped Na_0.5Bi_4.5Ti₄O₁₅--Bi₄Ti₃O₁₂ inter-growth ferroelectrics ceramics[J]. Front. Mater. Sci., 2017, 11(1): 51-58.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-017-0367-y
https://academic.hep.com.cn/foms/EN/Y2017/V11/I1/51

Fig.1 XRD patterns of NBT–BIT–xEr ceramics (x = 0.00, 0.05, 0.10, 0.15, 0.20 and 0.25). Inset: XRD amplification patterns of the (118) peaks from 30° to 31° and the HRTEM image of pure NBT–BIT ceramics.

Fig.2 SEM images of NBT–BIT–xEr ceramics with the varying Er³⁺ content of (a)x = 0.00, (b)x = 0.05, (c)x = 0.10, (d)x = 0.15, (e)x = 0.20, and (f)x = 0.25.

Fig.3 Raman spectra of NBT–BIT–xEr ceramics.

Fig.4 UC emission spectra of NBT–BIT–xEr ceramics with varying the Er³⁺ content (x) under the 980 nm excitation.

Fig.5 Integrated schematic diagram of Er³⁺ energy levels in the NBT–BIT–xEr system.

Fig.6 The ratio variation from the 548 nm green to the 670 nm red emissions for NBT–BIT–xEr ceramics with x = 0.05, 0.10, 0.15, 0.20, and 0.25. The inset shows CIE chromaticity coordinates of NBT–BIT–xEr ceramics.

Fig.7 (a) Normalized green UC emission spectra of NBT–BIT–0.20Er at different temperatures. (b) Lognormal plot of the FIR as a function of inverse absolute temperature. (c) Sensitivity as a function of absolute temperature.

Fig.8 Temperature dependence of dielectric constant and loss measured at 100 kHz for NBT–BIT–xEr ceramics with x = 0.00, 0.05, 0.10, 0.15, 0.20, and 0.25.

Tab.1 Electrical properties of NBT–BIT–xEr ceramics

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