Interferometric two-photon photoemission correlation
technique and femtosecond wet-electron dynamics at the TiO (110) surface

doi:10.1007/s11467-008-0001-7

Frontiers of Physics in China - Selected Publications from Chinese Universities

2008, Vol. 3

Issue (1): 26-40 https://doi.org/10.1007/s11467-008-0001-7

本期目录

Interferometric two-photon photoemission correlation technique and femtosecond wet-electron dynamics at the TiO (110) surface

LI Bin¹, ZHAO Jin², FENG Min³, ONDA Ken⁴

1.Engineering Center, University of Colorado; Department of Physics and Astronomy, University of Pittsburgh; 2.Department of Physics and Astronomy, University of Pittsburgh; 3.Department of Physics and Astronomy, University of Pittsburgh; Surface Science Center, University of Pittsburgh; 4.Department of Chemistry and Materials Science, Tokyo Institute of Technology;

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Abstract：The femtosecond time-resolved two-photon photoemission (TR-2PP) and the ultra high vacuum (UHV) surface science techniques are integrated to investigate the elec- tronic structures and the interfacial electron transfer dynamics at the atomically ordered adsorbate overlayers on TiO₂ single- crystalline surfaces. Our research into the CH₃OH/TiO₂ system exhibits complex dynamics, providing abundant informa- tion with regard to electron transport and solvation processes in the interfacial solvent structures. These represent the fundamentally physical, photochemical, and photocatalytic reactions of protic chemicals covered with metal-oxides.

出版日期: 2008-03-05

引用本文:

. Interferometric two-photon photoemission correlation technique and femtosecond wet-electron dynamics at the TiO (110) surface[J]. Frontiers of Physics in China - Selected Publications from Chinese Universities, 2008, 3(1): 26-40.
LI Bin, ZHAO Jin, FENG Min, ONDA Ken. Interferometric two-photon photoemission correlation technique and femtosecond wet-electron dynamics at the TiO (110) surface. Front. Phys. , 2008, 3(1): 26-40.

链接本文:

https://academic.hep.com.cn/fop/CN/10.1007/s11467-008-0001-7
https://academic.hep.com.cn/fop/CN/Y2008/V3/I1/26

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