Functionalization of BN nanotubes with free radicals: electroaffinity-independent configuration and band structure engineering
Functionalization of BN nanotubes with free radicals: electroaffinity-independent configuration and band structure engineering
Zhen-yu YANG (杨振宇)1, Ya-fei LI (李亚飞)2, Zhen ZHOU (周震)2()
1. Department of Chemistry, Nankai University, Tianjin 300071, China; 2. Institute of New Energy Material Chemistry, Institute of Scientific Computing, Nankai University, Tianjin 300071, China
The preferable configuration and electronic structure of several types of free radical functionalized boron nitride nanotubes (BNNTs) were investigated by using density functional theory computations. All the free radicals have strong interaction with B atom in the tube, in spite of the electroaffinity of the radicals. However, though a large charge is transferred from tubes to NH2, OH or CN radicals, little change happens to the electronic structure of BNNTs, while COOH and COCl radicals introduce halffilled impurity levels around the Fermi level. Higher functionalization concentration leads to multiple impurity states around the Fermi level, and makes BNNTs p-type semiconductors.
. Functionalization of BN nanotubes with free radicals: electroaffinity-independent configuration and band structure engineering[J]. Frontiers of Physics, 2009, 4(3): 378-382.
Zhen-yu YANG (杨振宇), Ya-fei LI (李亚飞), Zhen ZHOU (周震). Functionalization of BN nanotubes with free radicals: electroaffinity-independent configuration and band structure engineering. Front. Phys. , 2009, 4(3): 378-382.
A. Rubio, J. L. Corkill, and M. L. Cohen, Phys. Rev. B , 1994, 49: 5081 doi: 10.1103/PhysRevB.49.5081
3
N. G. Chopra, R. J. Luyken, K. Cherrey, V. H. Crespi, M. L. Cohen, S. G. Louie, and A. Zettl, Science , 1995, 269: 966 doi: 10.1126/science.269.5226.966
4
R. Saito, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Appl. Phys. Lett. , 1992, 60: 2204 doi: 10.1063/1.107080