In situ</italic> characterization of optoelectronic nanostructures and nanodevices

doi:10.1007/s11467-010-0131-6

Frontiers of Physics in China

2010, Vol. 5

Issue (4): 405-413 https://doi.org/10.1007/s11467-010-0131-6

MINI-REVIEW ARTICLE

本期目录

In situ characterization of optoelectronic nanostructures and nanodevices

Min GAO (高旻,

), Cheng-yao LI (李成垚), Wen-liang LI (李文亮), Xiao-xian ZHANG (张小娴), Lian-mao PENG (彭练矛)

Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China

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Abstract：

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.

Key words： one-dimensional (1-D) semiconductor nanostructure optoelectronic nanodevices in situ electron microscopy optical confinement deep level emission

收稿日期: 2010-05-20 出版日期: 2010-12-05

Corresponding Author(s): null,Email:mingao@pku.edu.cn

引用本文:

. In situ characterization of optoelectronic nanostructures and nanodevices[J]. Frontiers of Physics in China, 2010, 5(4): 405-413.
Min GAO (高旻), Cheng-yao LI (李成垚), Wen-liang LI (李文亮), Xiao-xian ZHANG (张小娴), Lian-mao PENG (彭练矛). In situ characterization of optoelectronic nanostructures and nanodevices. Front Phys Chin, 2010, 5(4): 405-413.

链接本文:

https://academic.hep.com.cn/fop/CN/10.1007/s11467-010-0131-6
https://academic.hep.com.cn/fop/CN/Y2010/V5/I4/405

1	X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, Nature , 2001, 409: 66 doi: 10.1038/35051047
2	R. Agarwal and C. M. Lieber, Appl. Phys. A , 2006, 85: 209 doi: 10.1007/s00339-006-3720-z
3	Y. Li, F. Qian, J. Xiang, and C. M. Lieber, Materials Today , 2006, 9: 18 doi: 10.1016/S1369-7021(06)71650-9
4	R. X. Yan, D. Gargas, and P. D. Yang, Nature Photonics , 2009, 3: 569 doi: 10.1038/nphoton.2009.184
5	M. A. Zimmler, D. Stichtenoth, C. Ronning, W. Yi, V. Narayanamurti, T. Voss, and F. Capasso, Nano Lett. , 2008, 8: 1695 doi: 10.1021/nl080627w
6	M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. D. Yang, Science , 2001, 292: 1897 doi: 10.1126/science.1060367
7	H. Kind, H. Yan, B. Messer, M. Law, and P. D. Yang, Adv. Mater. , 2002, 14: 158 doi: 10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W
8	M. Law, D. J. Sirbuly, J. C. Johnson, J. Goldberger, R. J. Saykally, and P. D. Yang, Science , 2004, 305: 1269 doi: 10.1126/science.1100999
9	X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, Nature , 2003, 421: 241 doi: 10.1038/nature01353
10	H. Zhou, M. Wissinger, J. Fallert, R. Hauschild, F. Stelzl, C. Klingshirn, and H. Kalt, Appl. Phys. Lett. , 2007, 91: 181112 doi: 10.1063/1.2805073
11	R. F. Oulton, V. J. Sorger, T. Zentgralf, R. M. Ma, C. Gladden, L. Dai, G. Bartal, and X. Zhang, Nature , 2009, 461: 629 doi: 10.1038/nature08364
12	C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett. , 2007, 7: 1003 doi: 10.1021/nl070111x
13	B. Tian, X. Zheng, T. J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang, and C. M. Lieber, Nature , 2007, 449: 885 doi: 10.1038/nature06181
14	M. R. Lee, R. D. Eckert, K. Forberich, G. Dennler, C. J. Brabec, and R. A. Gaudiana, Science , 2009, 324: 232 doi: 10.1126/science.1168539
15	L. Tong, R. R. Gattass, J. B. Ashcom, S. He, J. Lou, M. Shen, I. Maxwell, and E. Mazur, Nature , 2003, 426: 816 doi: 10.1038/nature02193
16	A. L. Pan, W. C. Zhou, E. S. P. Leong, R. B. Liu, A. H. Chin, B. S. Zou, and C. Z. Ning, Nano Lett. , 2009, 9: 784 doi: 10.1021/nl803456k
17	J. Dai, C. X. Xu, K. Zheng, C. G. Lv, and Y. P. Cui, Appl. Phys. Lett. , 2009, 95: 241110 doi: 10.1063/1.3276069
18	M. Gao, W. L. Li, Y. Liu, Q. Li, Q. Chen, and L. M. Peng, Appl. Phys. Lett. , 2008, 92: 113112 doi: 10.1063/1.2898168
19	C. Y. Li, M. Gao, C. Ding, X. X. Zhang, L. H. Zhang, Q. Chen, and L. M. Peng, Nanotechnology , 2009, 20: 175703 doi: 10.1088/0957-4484/20/17/175703
20	S. Frank, P. Poncharal, Z. L. Wang, and W. A. de Heer, Science , 1998, 280:1744 doi: 10.1126/science.280.5370.1744
21	M. S. Wang, J. Y. Wang, Q. Chen, and L. M. Peng, Adv. Funct. Mater. , 2005, 15:1825 doi: 10.1002/adfm.200500215
22	L. M. Peng, Q. Chen, X. L. Liang, S. Gao, J. Y. Wang, S. Kleindiek, and S. W. Tai, MICRON , 2004, 35: 495 doi: 10.1016/j.micron.2003.12.005
23	Y. Liu, S. Wang, Z. Y. Zhang, L. M. Peng, L. Shi, and Q. Li, Appl. Phys. Lett. , 2008, 92: 033102 doi: 10.1063/1.2837060
24	Q. Chen, S. Wang, and L. M. Peng, Nanotechnology , 2006, 17: 1087 doi: 10.1088/0957-4484/17/4/041
25	X. L. Wei, Y. Liu, Q. Chen, and L. M. Peng, Nanotechnology , 2008, 19: 355304 doi: 10.1088/0957-4484/19/35/355304
26	H. Kalt, Lect. Notes Phys. , 2005, 658: 51
27	J. C. Kim, H. Rho, L. M. Smith, H. E. Jackson, S. Lee, M. Dobrowolska, and J. K. Furdyna, Appl. Phys. Lett. , 1999, 75: 214 doi: 10.1063/1.124323
28	A. Gustafsson, M. E. Pistol, L. Montelius, and L. J. Samuelson, Appl. Phys. , 1998, 84: 1715
29	D. Liu, A. L. Pan, G. Z. Xu, Y. Q. Bai, X. Zhu, and B. S. Zou, Opt. Rev. , 2006, 13: 235 doi: 10.1007/s10043-006-0235-y
30	S. A. Empedocles, R. Neuhauser, K. Shimizu, and M. G. Bawendi, Adv. Mater. , 1999, 11: 1243 doi: 10.1002/(SICI)1521-4095(199910)11:15<1243::AID-ADMA1243>3.0.CO;2-2
31	J. B. Baxter, F. Wu, and E. S. Aydil, Appl. Phys. Lett. , 2003, 83: 3797 doi: 10.1063/1.1624467
32	X. B. Han, L. Z. Kou, X. L. Lang, J. B. Xia, N. Wang, R. Qin, J. Lu, J. Xu, Z. M. Liao, X. Z. Zhang, X. D. Shan, X. F. Song, J. Y. Gao, W. L. Guo, and D. P. Yu, Adv. Mater. , 2009, 21: 4937 doi: 10.1002/adma.200900956
33	P. M. Petroff and D. W. Lang, Appl. Phys. Lett. , 1977, 31: 60 doi: 10.1063/1.89590
34	B. G. Yacobi and D. B. Holt, Cathodoluminescence Microscopy of Inorganic Solids, New York: Springer-Verlag, 1990: 116
35	Y. Ohno and S. Takeda, Rev. Sci. Instrum. , 1995, 66: 4866 doi: 10.1063/1.1146166
36	L. J. Brillson, J. Vac. Sci. Technol. B , 2001, 19: 1762 doi: 10.1116/1.1394728
37	M. Gao, S. T. Bradley, Y. Cao, D. Jena D, Y. Lin Y, S. A. Ringel, J. Hwang, W. J. Schaff, and L. J. Brillson, J. Appl. Phys. , 2006, 100: 103512 doi: 10.1063/1.2382622
38	A. B. Djuri?i? and Y. H. Leung, Small , 2006, 2: 944 doi: 10.1002/smll.200600134
39	K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. , 1996, 79: 7983 doi: 10.1063/1.362349
40	A. B. Djuri?i?Y. H. Leung, K. H. Tam, Y. F. Hsu, L. Ding, W. K. Ge, Y. C. Zhong, K. S. Wong, W. K. Chan, H. L. Tam, K. W. Cheah, W. M. Kwok, and D. L. Phillips, Nanotechnology , 2007, 18: 095702
41	C. W. Chen, K. H. Chen, C. H. Shen, A. Ganguly, L. C. Chen, J. J. Wu, H. I. Wen, and W. F. Pong, Appl. Phys. Lett. , 2006, 88: 241905 doi: 10.1063/1.2211047
42	P. C. Chang, C. J. Cheien, D. Stichtenoth, C. Ronning, and J. G. Lu, Appl. Phys. Lett. , 2007, 90: 113101 doi: 10.1063/1.2712507
43	D. C. Look, G. C. Farlow, S. Limpijumnong, S. B. Zhang, and K. Nordlund, Phys. Rev. Lett. , 2005, 95: 225502 doi: 10.1103/PhysRevLett.95.225502
44	A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. , 2005, 87: 122102 doi: 10.1063/1.2053360
45	M. Freitag, J. Chen, J. Tersoff, J. C. Tsang, Q. Fu, J. Liu, and P. Avouris, Phys. Rev. Lett. , 2004, 93: 076803 doi: 10.1103/PhysRevLett.93.076803
46	J. F. Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science , 2001, 293: 1455 doi: 10.1126/science.1062340
47	L. Wischmeier, T. Voss, S. B?rner, and W. Schade, Appl. Phys. A , 2006, 84: 111 doi: 10.1007/s00339-006-3589-x
48	F. Qian, S. Gradecak, Y. Li, C. Y. Wen, and C. M. Liber, Nano Lett. , 2005, 5: 2287 doi: 10.1021/nl051689e
49	C. J. Barrelet, A. B. Greytak, and C. M. Lieber, Nano Lett. , 2004, 4: 1981 doi: 10.1021/nl048739k
50	L. K. van Vugt, S. Rühle, P. Ravindran, H. C. Gerritsen, L. Kuipers, and D. Vanmaekelbergh, Phys. Rev. Lett. , 2006, 97: 147401 doi: 10.1103/PhysRevLett.97.147401
51	S. Rühle, L. K. van Vugt, H. Y. Li, N. A. Keizer, L. Kuipers, and D. Vanmaekelbergh, Nano Lett. , 2008, 8: 119 doi: 10.1021/nl0721867
52	J. C. Johnson, H. Yan, P. Yang, and R. J. Saykally, J. Phys. Chem. B , 2003, 107: 8816 doi: 10.1021/jp034482n
53	T. Voss, G. T. Svacha, E. Mazur, S. Müller, C. Ronning, D. Konjhodzic, and F. Marlow, Nano Lett. , 2007, 7: 3675 doi: 10.1021/nl071958w
54	R. M. Ma, X. L. Wei, L. Dai, S. F. Liu, T. Chen, S. Yue, Z. Li, Q. Chen, and G. G. Qin, Nano Lett ., 2009, 9: 2697 doi: 10.1021/nl901190v
55	W. L. Li, M. Gao, X. X. Zhang, D. F. Liu, L. M. Peng, and S. S. Xie, Appl. Phys. Lett. , 2009, 95: 173109 doi: 10.1063/1.3257366
56	W. L. Li, M. Gao, R. Cheng, X. X. Zhang, S. S. Xie, and L. M. Peng, Appl. Phys. Lett. , 2008, 93: 023117 doi: 10.1063/1.2957982
57	X. X. Zhang, D. F. Liu, L. H. Zhang, W. L. Li, M. Gao, W. J. Ma, Y. Ren, Q. S. Zeng, Z. Q. Niu, W. Y. Zhou, and S. S. Xie, J. Mater. Chem. , 2009, 19: 962 doi: 10.1039/b815518f
58	J. C. Johnson, H. Q. Yan, P. D. Yang, and R. J. Saykally, J. Phys. Chem. B , 2003, 107: 8816 doi: 10.1021/jp034482n
59	J. Bao, M. A. Zimmler, and F. Capasso, Nano Lett. , 2006, 6: 1719 doi: 10.1021/nl061080t
60	Y. Yu, C. H. Jin, R. H. Wang, Q. Chen, and L. M. Peng, J. Phys. Chem. B , 2005, 109: 18772 doi: 10.1021/jp051294j

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