1. The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin 300457, China 2. National Center for Nanoscience and Technology, No. 11 Beiyitiao, Zhongguancun, Beijing 100190, China 3. School of Materials Science and Engineering, Beihang University, Beijing 100191, PR China
A wrinkle-based thin-film device can be used to develop optoelectronic devices, photovoltaics, and strain sensors. Here, we propose a stable and ultrasensitive strain sensor based on two-dimensional (2D) semiconducting gallium selenide (GaSe) for the first time. The response of the electrical resistance to strain was demonstrated to be very sensitive for the GaSe-based strain sensor, and it reached a gauge factor of –4.3, which is better than that of graphene-based strain sensors. The results show us that strain engineering on a nanoscale can be used not only in strain sensors but also for a wide range of applications, such as flexible field-effect transistors, stretchable electrodes, and flexible solar cells.
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