Ferroelectricity in hBN intercalated double-layer graphene
Yibo Wang1(), Siqi Jiang1, Jingkuan Xiao1, Xiaofan Cai1, Di Zhang1, Ping Wang1, Guodong Ma1, Yaqing Han1, Jiabei Huang1, Kenji Watanabe2, Takashi Taniguchi2, Yanfeng Guo4, Lei Wang1,3, Alexander S. Mayorov1(), Geliang Yu1,3()
1. National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, China 2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 3. Collaborative Innovation Centre of Advanced Microsctructures, Nanjing University, Nanjing 210093, China 4. School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China
Van der Waals (vdW) assembly of two-dimensional materials has long been recognized as a powerful tool for creating unique systems with properties that cannot be found in natural compounds [Nature 499, 419 (2013)]. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures [Sci. Adv. 5, eaax5080 (2019); Nature560, 336 (2018)]. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride. The structure demonstrates high room temperature mobility of the order of 10 m2·V−1·s−1 and exhibits ambipolar switching in response to the external electric field. The observed hysteresis is reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a promising route for developing novel phase-changing devices. A possible microscopic model of ferroelectricity is discussed.
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