Tunable near-infrared light emission from layered TiS3 nanoribbons
Junrong Zhang1,2, Cheng Chen1,2, Yanming Wang1,2, Yang Lu1,2, Honghong Li3, Xingang Hou2, Yaning Liang2,4, Long Fang2,5, Du Xiang3(), Kai Zhang1,2(), Junyong Wang1,2()
1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China 2. CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China 3. Frontier Institute of Chip and System, Fudan University, Shanghai 200438, China 4. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China 5. College of Energy & Power Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
The low-dimensional light source shows promise in photonic integrated circuits. Stable layered van der Waals material that exhibits luminescence in the near-infrared optical communication waveband is an essential component in on-chip light sources. Herein, the tunable near-infrared photoluminescence (PL) of the air-stable layered titanium trisulfide (TiS3) is reported. Compared with iodine particles as a transport agent, TiS3 grown by chemical vapor transport using sulfur powder as a transport agent has fewer sulfur vacancies, which increases the luminescence intensity by an order of magnitude. The PL emission wavelength can be regulated in the near-infrared regime by thickness control. In addition, we observed an interesting anisotropic strain response of PL in layered TiS3 nanoribbon: a blue shift of PL was achieved when the uniaxial tensile strain was applied along the b-axis, while a negligible shift was observed when the strain was applied along the a-axis. Our work reveals the tunable near-infrared luminescent properties of TiS3 nanoribbons, suggesting their potential applications as near-infrared light sources in photonic integrated circuits.
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