Abstract：Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs (001) system fabricated using molecular-beam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one.
出版日期: 2007-03-05
引用本文:
. Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy[J]. Frontiers of Physics in China - Selected Publications from Chinese Universities, 2007, 2(1): 68-71.
WU Ju, JIN Pen, Lv Xiao-jing, JIAO Yu-heng, WANG Zhan-guo. Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy. Front. Phys. , 2007, 2(1): 68-71.
