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Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy |
| WU Ju, JIN Pen, Lv Xiao-jing, JIAO Yu-heng, WANG Zhan-guo |
| Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China; |
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Abstract Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs (001) system fabricated using molecular-beam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one.
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Issue Date: 05 March 2007
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