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Optical properties of low-dimensional structures formed by irradiation of laser |
| HUANG Wei-qi1, LIU Shi-rong2, QIN Chao-jian2, CAI Shao-hong3, XU Li3, WU Ke-yue3 |
| 1.Photoelectron Technology and Application Lab, Guizhou University, Guiyang 550026, China; Department of Physics, Guizhou Educational College, Guiyang 550003, China; 2.Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China; 3.Photoelectron Technology and Application Lab, Guizhou University, Guiyang 550026, China |
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Abstract Some kinds of low-dimensional nanostructures can be formed by the irradiation of laser on a pure silicon sample and SiGe alloy sample. We have studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706 nm and 725 nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. We propose a mechanism on the increasing PL emission in the above structures, in which the trap state of the interface between SiO2 and nanocrystal plays an important role.
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Issue Date: 05 March 2007
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