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InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer |
| L? Xiao-jing, WU Ju, XU Bo, ZENG Yi-ping, WANG Biao-qiang, WANG Zhan-guo |
| Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; |
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Abstract An AlAs layer of two or three monolayers was inserted beneath the strained InAs layer in the fabrication of InAs nanostructure on the In0.53Ga0.47As and In0.52Al0.48As buffer layer lattice-matched to InP(001) substrate using molecular beam epitaxy. The effects of AlAs insertion on the InAs nanostructures were investigated and discussed.
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Issue Date: 05 December 2007
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