Energy band and band-gap properties of deformed
single-walled silicon nanotubes

doi:10.1007/s11467-010-0017-7

Front. Phys.

2010, Vol. 5

Issue (2) : 183-187 https://doi.org/10.1007/s11467-010-0017-7

Research articles

Energy band and band-gap properties of deformed single-walled silicon nanotubes

Guang-cun SHAN (单光存),Wei HUANG (黄维),

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Abstract The fantastic physical properties of single-walled silicon nanotubes (SWSiNTs) under mechanical strain make them promising materials for fabricating nanoscale electronic devices or transducers. Here we investigate the energy band and band-gap properties of the SWSiNTs calculated from the tight-binding model approximation. The results show that the band-gap properties are very sensitive to the deformation degree and the helicity of the SWSiNTs. The results can be employed to guide the design of nanoelectronic devices based on silicon nanotubes.

Keywords silicon nanotubes band gap deformed energy band

Issue Date: 05 June 2010

Cite this article:

Guang-cun SHAN (单光存),Wei HUANG (黄维). Energy band and band-gap properties of deformed single-walled silicon nanotubes[J]. Front. Phys. , 2010, 5(2): 183-187.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-010-0017-7
https://academic.hep.com.cn/fop/EN/Y2010/V5/I2/183

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