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In situ characterization of optoelectronic nanostructures and nanodevices |
Min GAO (高旻, ), Cheng-yao LI (李成垚), Wen-liang LI (李文亮), Xiao-xian ZHANG (张小娴), Lian-mao PENG (彭练矛) |
| Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China |
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Abstract One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.
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| Keywords
one-dimensional (1-D) semiconductor nanostructure
optoelectronic nanodevices
in situ electron microscopy
optical confinement
deep level emission
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Corresponding Author(s):
null,Email:mingao@pku.edu.cn
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Issue Date: 05 December 2010
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