Quantum spin Hall effect in inverted InAs/GaSb quantum wells

doi:10.1007/s11467-011-0204-1

Front. Phys.

2012, Vol. 7

Issue (2) : 200-207 https://doi.org/10.1007/s11467-011-0204-1

REVIEW ARTICLE

Quantum spin Hall effect in inverted InAs/GaSb quantum wells

Ivan Knez(

), Rui-Rui Du(

)

Department of Physics and Astronomy, Rice University, Houston, TX 77251-1892, USA

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Abstract

We review the recent experimental progress towards observing quantum spin Hall effect in inverted InAs/GaSb quantum wells (QWs). Low temperature transport measurements in the hybridization gap show bulk conductivity of a non-trivial origin, while the length and width dependence of conductance in this regime show strong evidence for the existence of helical edge modes proposed by Liu et al. [Phys. Rev. Lett., 2008, 100: 236601]. Surprisingly, edge modes persist in spite of comparable bulk conduction and show only weak dependence on magnetic field. We elucidate that seeming independence of edge on bulk transport comes due to the disparity in Fermi-wave vectors between the bulk and the edge, leading to a total internal reflection of the edge modes.

Keywords quantum spin Hall effect InAs/GaSb quantum wells topological insulators

Corresponding Author(s): Knez Ivan,Email:ik5@rice.edu; Du Rui-Rui,Email:rrd@rice.edu

Issue Date: 01 April 2012

Cite this article:

Ivan Knez,Rui-Rui Du. Quantum spin Hall effect in inverted InAs/GaSb quantum wells[J]. Front. Phys. , 2012, 7(2): 200-207.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-011-0204-1
https://academic.hep.com.cn/fop/EN/Y2012/V7/I2/200

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