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Frontiers of Physics

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Front. Phys.    2014, Vol. 9 Issue (3) : 398-418    https://doi.org/10.1007/s11467-013-0405-x
Special Issue: Nanoscience and Emerging Nanotechnologies (Edited by C. M. Lieber)
Semiconductor nanostructures enabled by aerosol technology
Martin H. Magnusson1,2,B. Jonas Ohlsson3,Mikael T. Björk2,Kimberly A. Dick1,4,Magnus T. Borgström1,Knut Deppert1,Lars Samuelson1,*()
1. Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden
2. Sol Voltaics AB, Ideon Science Park, Scheelevägen 17, SE-22370 Lund, Sweden
3. QuNano AB, Ideon Science Park, Scheelevägen 17, SE-22370 Lund, Sweden
4. Center for Analysis and Synthesis, Lund University, Box 124, SE-22100 Lund, Sweden
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Abstract

Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostructures for a variety of applications in semiconductor physics and device technology. Examples are given from: production of metal and metal alloy particles; semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area devices based on aerosol particles.
Keywords solar cell      aerosol      nanoparticle      nanowire      metal-organic vapor phase epitaxy (MOVPE)      device physics      light emitting diodes (LED)     
Fund: 
Corresponding Author(s): Lars Samuelson   
Issue Date: 26 June 2014
 Cite this article:   
Knut Deppert,Lars Samuelson,Martin H. Magnusson, et al. Semiconductor nanostructures enabled by aerosol technology[J]. Front. Phys. , 2014, 9(3): 398-418.
 URL:  
https://academic.hep.com.cn/fop/EN/10.1007/s11467-013-0405-x
https://academic.hep.com.cn/fop/EN/Y2014/V9/I3/398
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100 K. A. Dick, K. Deppert, M. W. Larsson, W. Seifert, L. Reine Wallenberg, and L. Samuelson, Height-controlled nanowire branches on nanotrees using a polymer mask, Nanotechnology, 2007, 18(3): 035601
doi: 10.1088/0957-4484/18/3/035601
101 K. A. Dick, K. Deppert, L. S. Karlsson, W. Seifert, L. R. Wallenberg, and L. Samuelson, Position-controlled interconnected InAs nanowire networks, Nano Lett., 2006, 6(12): 2842
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102 K. A. Dick, Z. Geretovszky, A. Mikkelsen, L. S. Karlsson, E. Lundgren, J. O. Malm, J. N. Andersen, L. Samuelson, W. Seifert, B. A.Wacaser, and K. Deppert, Improving InAs nanotree growth with composition-controlled Au-In nanoparticles, Nanotechnology, 2006, 17(5): 1344
doi: 10.1088/0957-4484/17/5/029
103 T. Junno, S. Anand, K. Deppert, L. Montelius, and L. Samuelson, Contact mode atomic force microscopy imaging of nanometer-sized particles, Appl. Phys. Lett., 1995, 66(24): 3295
doi: 10.1063/1.113735
104 T. Junno, K. Deppert, L. Montelius, and L. Samuelson, Controlled manipulation of nanoparticles with an atomic force microscope, Appl. Phys. Lett., 1995, 66(26): 3627
doi: 10.1063/1.113809
105 T. Junno, S. B. Carlsson, H. Q. Xu, L. Montelius, and L. Samuelson, Fabrication of quantum devices by angstromlevel manipulation of nanoparticles with an atomic force microscope, Appl. Phys. Lett., 1998, 72: 548
doi: 10.1063/1.120754
106 T. Junno, M. H. Magnusson, S. B. Carlsson, K. Deppert, J. O. Malm, L. Montelius, and L. Samuelson, Single-electron devices via controlled assembly of designed nanoparticles, Microelectron. Eng., 1999, 47(1–4): 179
doi: 10.1016/S0167-9317(99)00184-7
107 C. Thelander, M. H. Magnusson, and K. Deppert, L. Samuelson, P. R. Poulsen, J. Nyg?rd, and J. Borggreen, Gold nanoparticle single-electron transistor with carbon nanotube leads, Appl. Phys. Lett., 2001, 79: 2016
doi: 10.1063/1.1405154
108 T. Junno, S. B. Carlsson, H. Q. Xu, L. Samuelson, A. O. Orlov, and G. L. Snider, Single-electron tunneling effects in a metallic double dot device, Appl. Phys. Lett., 2002, 80(4): 667
doi: 10.1063/1.1436532
109 L. I. Samuelson and K. W. Deppert, United States patent, 2004, US6,744,065
110 S. K. Lee, C. M. Zetterling, M. ?stling, I. ?berg, M. H. Magnusson, K. Deppert, L. E. Wernersson, L. Samuelson, and A. Litwin, Reduction of the Schottky barrier height on silicon carbide using Au nano-particles, Solid-State Electron., 2002, 46(9): 1433
doi: 10.1016/S0038-1101(02)00122-3
111 L. E. Wernersson, A. Litwin, L. Samuelson, and W. Seifert, Controlled Carrier Depletion around Nano-Scale Metal Discs Embedded in GaAs, Jpn. J. Appl. Phys., 1997, 36: L1628
doi: 10.1143/JJAP.36.L1628
112 L. E. Wernersson, A. Litwin, L. Samuelson, and H. Xu, Operation of a ballistic heterojunction permeable base transistor, IEEE Trans. Electron. Dev., 1997, 44(11): 1829
doi: 10.1109/16.641349
113 L. E. Wernersson, M. Borgstr?m, B. Gustafson, A. Gustafsson, L. Jarlskog, J. O. Malm, A. Litwin, L. Samuelson, and W. Seifert, MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devices, J. Cryst. Growth, 2000, 221(1–4): 704
doi: 10.1016/S0022-0248(00)00804-6
114 I. ?berg, K. Deppert, M. H. Magnusson, I. Pietzonka, W. Seifert, L. E. Wernersson, and L. Samuelson, Nanoscale tungsten aerosol particles embedded in GaAs, Appl. Phys. Lett., 2002, 80(16): 2976
doi: 10.1063/1.1470701
115 H. Fissan, M. K. Kennedy, T. J. Krinke, and F. E. Kruis, J. Nanopart. Res., 2003, 5(3–4): 299
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116 C. Busch, G. Schierning, R. Theissmann, A. Nedic, F. E. Kruis, and R. Schmechel, Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase, J. Nanopart. Res., 2012, 14(6): 888
doi: 10.1007/s11051-012-0888-3
117 K. W. Deppert, C. M. H. Magnusson, L. I. Samuelson, and T. J. Krinke, United States patent, 2007, US7,223,444
118 M. T. Bj?rk, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Nanowire resonant tunneling diodes, Appl. Phys. Lett., 2002, 81(23): 4458
doi: 10.1063/1.1527995
119 L. Samuelson, C. Thelander, M. T. Bj?rk, M. Borgstr?m, K. Deppert, K. A. Dick, A. E. Hansen, T. M?rtensson, N. Panev, A. I. Persson, W. Seifert, N. Sk?ld, M. W. Larsson, and L. R. Wallenberg, Semiconductor nanowires for 0D and 1D physics and applications, Physica E, 2004, 25(2–3): 313
doi: 10.1016/j.physe.2004.06.030
120 C. Thelander, T. M?rtensson, M. T. Bj?rk, B. J. Ohlsson, M. W. Larsson, L. R. Wallenberg, and L. Samuelson, Single-electron transistors in heterostructure nanowires, Appl. Phys. Lett., 2003, 83(10): 2052
doi: 10.1063/1.1606889
121 M. T. Bj?rk, C. Thelander, A. E. Hansen, L. E. Jensen, M. W. Larsson, L. R. Wallenberg, and L. Samuelson, Few-electron quantum dots in nanowires, Nano Lett., 2004, 4(9): 1621
doi: 10.1021/nl049230s
122 M. T. Bj?rk, A. Fuhrer, A. E. Hansen, M. W. Larsson, L. E. Fr?berg, and L. Samuelson, Tunable effective g factor in InAs nanowire quantum dots, Phys. Rev. B, 2005, 72(20): 201307
doi: 10.1103/PhysRevB.72.201307
123 A. Fuhrer, L. E. Fr?berg, J. N. Pedersen, M. W. Larsson, A. Wacker, M. E. Pistol, and L. Samuelson, Few electron double quantum dots in InAs/InP nanowire heterostructures, Nano Lett., 2007, 7(2): 243
doi: 10.1021/nl061913f
124 A. Fuhrer, C. Fasth, and L. Samuelson, Single electron pumping in InAs nanowire double quantum dots, Appl Phys. Lett., 2007, 91(5): 052109
doi: 10.1063/1.2767197
125 C. Fasth, A. Fuhrer, L. Samuelson, V. N. Golovach, and D. Loss, Direct measurement of the spin–orbit interaction in a two-electron InAs nanowire quantum dot, Phys. Rev. Lett., 2007, 98(26): 266801
doi: 10.1103/PhysRevLett.98.266801
126 J. Bao, D. C. Bell, F. Capasso, J. B.Wagner, T. M?rtensson, J. Tr?g?rdh, and L. Samuelson, Optical properties of rotationally twinned InP nanowire heterostructures, Nano Lett., 2008, 8(3): 836
doi: 10.1021/nl072921e
127 N. Akopian, G. Patriarche, L. Liu, J. C. Harmand, and V. Zwiller, Crystal phase quantum dots, Nano Lett., 2010, 10(4): 1198
doi: 10.1021/nl903534n
128 C. Weber, A. Fuhrer, C. Fasth, G. Lindwall, L. Samuelson, and A. Wacker, Probing confined phonon modes by transport through a nanowire double quantum dot, Phys. Rev. Lett., 2010, 104(3): 036801
doi: 10.1103/PhysRevLett.104.036801
129 C. Thelander, P. Agarwal, S. Brongersma, J. Eymery, L. F. Feiner, A. Forchel, M. Scheffler, W. Riess, B. J. Ohlsson, U. G?sele, and L. Samuelson, Nanowire-based one-dimensional electronics, Mater. Today, 2006, 9(10): 28
doi: 10.1016/S1369-7021(06)71651-0
130 C. Thelander, C. Rehnstedt, L. E. Fr?berg, E. Lind, T. M?rtensson, P. Caroff, T. L?wgren, B. J. Ohlsson, L. Samuelson, and L. E. Wernersson, Development of a vertical wrap-gated InAs FET, IEEE Trans. Electron. Dev., 2008, 55(11): 3030
doi: 10.1109/TED.2008.2005151
131 C. P. T. Svensson, T. M?rtensson, J. Tr?g?rdh, C. Larsson, M. Rask, D. Hessman, L. Samuelson, and J. Ohlsson, Monolithic GaAs/InGaP nanowire light emitting diodes on silicon, Nanotechnology, 2008, 19(30): 305201
doi: 10.1088/0957-4484/19/30/305201
132 L. I. Samuelson, P. Svensson, J. Ohlsson, and T. L?wgren, United States patent, 2011, US8,049,203
133 L. I. Samuelson, B. Pedersen, and B. J. Ohlsson, United States patent, 2012, US8,183,587
134 B. Pedersen, L. Samuelson, J. Ohlsson, and P. Svensson, United States patent, 2012, US8,227,817
135 B. M. Kayes, H. A. Atwater, and N. S. Lewis, Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells, J. Appl. Phys., 2005, 97(11): 114302
doi: 10.1063/1.1901835
136 M. Heurlin, P. Wickert, S. F?lt, M. T. Borgstr?m, K. Deppert, L. Samuelson, and M. H. Magnusson, Axial InP nanowire tandem junction grown on a silicon substrate, Nano Lett., 2011, 11(5): 2028
doi: 10.1021/nl2004219
137 L. Samuelson, M. Magnusson, and F. Capasso, United States patent application, US 2010/0186809
138 M. Borgstr?m, M. Heurlin, and S. F?lt, United States patent application, US 2012/0199187
139 N. Anntu and H. Q. Xu, Coupling of light into nanowire arrays and subsequent absorption, J. Nanosci. Nanotechnol., 2010, 10(11): 7183
doi: 10.1166/jnn.2010.2907
140 J. Wallentin, N. Anttu, D. Asoli, M. Huffman, I. ?berg, M. H. Magnusson, G. Siefer, P. Fuss-Kailuweit, F. Dimroth, B. Witzigmann, H. Q. Xu, L. Samuelson, K. Deppert, and M. T. Borgstr?m, InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit, Science, 2013, 339(6123): 1057
doi: 10.1126/science.1230969
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