A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures

doi:10.1007/s11467-015-0520-y

Front. Phys.

2016, Vol. 11

Issue (1) : 116805 https://doi.org/10.1007/s11467-015-0520-y

RESEARCH ARTICLE

A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures

Dongxue Chen^1,²,Qian Liu^1,^*(

)

1. National Center for Nanoscience and Technology, Beijing 100190, China
2. University of Chinese Academy of Sciences, Beijing 100080, China

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Abstract

Contact exposure is expected to occur in conventional lithography, and can be a source of process deviations (such as shrinking and distortion of templates) during reactive ion etching and inductively coupled plasma etching, as these deviations are induced by ion bombardment. This typically results in undesired sidewall effects, such as lower sidewall angles. Here we report a novel hanging bowlshaped lithography mask that can effectively minimize sidewall effects in lithography applications. As a test case, standard silicon carbide pillars with vertical sidewalls are fabricated using this mask. The mask could be used for fabrication of high-aspect-ratio structures with ultra-violet lithography.

Keywords UV lithography hanging bowl-shaped mask sidewall effects ICP SiC

Fund:

Corresponding Author(s): Qian Liu

Online First Date: 18 November 2015 Issue Date: 01 February 2016

Cite this article:

Dongxue Chen,Qian Liu. A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures[J]. Front. Phys. , 2016, 11(1): 116805.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-015-0520-y
https://academic.hep.com.cn/fop/EN/Y2016/V11/I1/116805

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