Direct growth of graphene on gallium nitride using C<sub>2</sub>H<sub>2</sub> as carbon source

doi:10.1007/s11467-015-0534-5

Front. Phys.

2016, Vol. 11

Issue (2) : 116803 https://doi.org/10.1007/s11467-015-0534-5

RESEARCH ARTICLE

Direct growth of graphene on gallium nitride using C₂H₂ as carbon source

Bing Wang (王兵)(

),Yun Zhao (赵云),Xiao-Yan Yi (伊晓燕)(

),Guo-Hong Wang (王国宏),Zhi-Qiang Liu (刘志强),Rui-Rei Duan (段瑞飞),Peng Huang (黄鹏),Jun-Xi Wang (王军喜),Jin-Min Li (李晋闽)

Semiconductor Lighting Technology R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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Abstract

Growing graphene on gallium nitride (GaN) at temperatures greater than 900°C is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C₂H₂ as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4–5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830°C was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.

Keywords graphene C₂H₂ gallium nitride chemical vapor deposition Raman spectroscopy

Corresponding Author(s): Bing Wang (王兵),Xiao-Yan Yi (伊晓燕)

Online First Date: 27 November 2015 Issue Date: 29 April 2016

Cite this article:

Bing Wang (王兵),Yun Zhao (赵云),Xiao-Yan Yi (伊晓燕), et al. Direct growth of graphene on gallium nitride using C₂H₂ as carbon source[J]. Front. Phys. , 2016, 11(2): 116803.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-015-0534-5
https://academic.hep.com.cn/fop/EN/Y2016/V11/I2/116803

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