Impurity scattering effect in Pd-doped superconductor SrPt<sub>3</sub>P

doi:10.1007/s11467-016-0554-9

Front. Phys.

2016, Vol. 11

Issue (4) : 117403 https://doi.org/10.1007/s11467-016-0554-9

RESEARCH ARTICLE

Impurity scattering effect in Pd-doped superconductor SrPt₃P

Kang-Kang Hu^1,²,Bo Gao²,Qiu-Cheng Ji²,Yong-Hui Ma^2,³,Hui Zhang⁴,Gang Mu^2,^*(

),Fu-Qiang Huang⁴,Chuan-Bing Cai¹,Xiao-Ming Xie²

¹. Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China
². State Key Laboratory of Functional Materials for Informatics and Shanghai Center for Superconductivity, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
³. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
⁴. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

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Abstract

We present a systematic study of the impurity scattering effect induced by Pd dopants in the superconductor SrPt₃P. Using a solid-state reaction method, we fabricated the Pd-doped superconductor Sr(Pt_1−xPd_x)₃P.We found that the residual resistivity ρ₀ increases quickly with Pd doping, whereas the residual resistance ratio (RRR) displays a dramatic reduction. In addition, both the nonlinear field-dependent behavior of the Hall resistivity ρ_xy and the strong temperature dependence of the Hall coefficient R_H at low temperature are suppressed by Pd doping. All the experimental results can be explained by an increase in scattering by impurities induced by doping. Our results suggest that the Pt position is very crucial to the carrier conduction in the present system.

Keywords impurity scattering effect SrPt₃P superconductors

Corresponding Author(s): Gang Mu

Online First Date: 01 February 2016 Issue Date: 08 June 2016

Cite this article:

Kang-Kang Hu,Bo Gao,Qiu-Cheng Ji, et al. Impurity scattering effect in Pd-doped superconductor SrPt₃P[J]. Front. Phys. , 2016, 11(4): 117403.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-016-0554-9
https://academic.hep.com.cn/fop/EN/Y2016/V11/I4/117403

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