Impurity-limited quantum transport variability in magnetic tunnel junctions

doi:10.1007/s11467-016-0644-8

Front. Phys.

2017, Vol. 12

Issue (4) : 127304 https://doi.org/10.1007/s11467-016-0644-8

RESEARCH ARTICLE

Impurity-limited quantum transport variability in magnetic tunnel junctions

Jianing Zhuang^1,²,Yin Wang^1,³(

),Yan Zhou¹(

),Jian Wang^1,³,Hong Guo^4,¹

¹. Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China
². Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
³. The University of Hong Kong Shenzhen Institute of Research and Innovation, Shenzhen 518057, China
⁴. Center for the Physics of Materials and Department of Physics, McGill University, Montreal, PQ, Canada, H3A 2T8

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Abstract

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel magnetoresistance ratio (TMR) and the average values and variances of the currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our firstprinciples calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of spintronic devices, which is imperative for high-volume production.

Keywords megnetic tunnel junctions tunnel magnetoresistance first principles NEGF-DFT

Corresponding Author(s): Yin Wang,Yan Zhou

Issue Date: 19 December 2016

Cite this article:

Jianing Zhuang,Yin Wang,Yan Zhou, et al. Impurity-limited quantum transport variability in magnetic tunnel junctions[J]. Front. Phys. , 2017, 12(4): 127304.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-016-0644-8
https://academic.hep.com.cn/fop/EN/Y2017/V12/I4/127304

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