Evolution of individual quantum Hall edge states in the presence of disorder

doi:10.1007/s11467-018-0784-0

Front. Phys.

2018, Vol. 13

Issue (4) : 137306 https://doi.org/10.1007/s11467-018-0784-0

RESEARCH ARTICLE

Evolution of individual quantum Hall edge states in the presence of disorder

Kai-Tong Wang¹, Fuming Xu², Yanxia Xing³(

), Hong-Kang Zhao¹(

)

¹. School of Physics, Beijing Institute of Technology, Beijing 100081, China
². Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China
³. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China

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Abstract

By using the Bloch eigenmode matching approach, we numerically study the evolution of individual quantum Hall edge states with respect to disorder. As demonstrated by the two-parameter renormalization group flow of the Hall and Thouless conductances, quantum Hall edge states with high Chern number n are completely different from that of the n = 1 case. Two categories of individual edge modes are evaluated in a quantum Hall system with high Chern number. Edge states from the lowest Landau level have similar eigenfunctions that are well localized at the system edge and independent of the Fermi energy. On the other hand, at fixed Fermi energy, the edge state from higher Landau levels exhibit larger expansion, which results in less stable quantum Hall states at high Fermi energies. By presenting the local current density distribution, the effect of disorder on eigenmode-resolved edge states is distinctly demonstrated.

Keywords quantum Hall edge states Landau level quantum phase transition

Corresponding Author(s): Yanxia Xing,Hong-Kang Zhao

Issue Date: 26 April 2018

Cite this article:

Kai-Tong Wang,Fuming Xu,Yanxia Xing, et al. Evolution of individual quantum Hall edge states in the presence of disorder[J]. Front. Phys. , 2018, 13(4): 137306.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-018-0784-0
https://academic.hep.com.cn/fop/EN/Y2018/V13/I4/137306

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