Interlayer coupling effect in van der Waals heterostructures of transition metal dichalcogenides

doi:10.1007/s11467-020-0991-3

Front. Phys.

2021, Vol. 16

Issue (1) : 13501 https://doi.org/10.1007/s11467-020-0991-3

RESEARCH ARTICLE

Interlayer coupling effect in van der Waals heterostructures of transition metal dichalcogenides

Yuan-Yuan Wang, Feng-Ping Li, Wei Wei(

), Bai-Biao Huang, Ying Dai(

)

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

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Abstract

Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of type-II band alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer, instead of an external electric field. On the basis of symmetry analysis, the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined, and a four-level k·p model was developed to obtain the interlayer hopping. Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets. Moreover, the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified.

Keywords van der Waals heterostructures transition metal dichalcogenides interlayer coupling effects k·p model interlayer exciton

Corresponding Author(s): Wei Wei,Ying Dai

Just Accepted Date: 25 August 2020 Issue Date: 10 October 2020

Cite this article:

Yuan-Yuan Wang,Feng-Ping Li,Wei Wei, et al. Interlayer coupling effect in van der Waals heterostructures of transition metal dichalcogenides[J]. Front. Phys. , 2021, 16(1): 13501.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-020-0991-3
https://academic.hep.com.cn/fop/EN/Y2021/V16/I1/13501

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