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Frontiers of Physics

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ISSN 2095-0470(Online)

CN 11-5994/O4

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Front. Phys.    2021, Vol. 16 Issue (4) : 43301    https://doi.org/10.1007/s11467-021-1052-2
REVIEW ARTICLE
Optoelectronic characteristics and application of black phosphorus and its analogs
Ying-Ying Li, Bo Gao(), Ying Han, Bing-Kun Chen, Jia-Yu Huo
College of Communication Engineering, Jilin University, Changchun 130012, China
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Abstract

The tunable bandgap from 0.3 eV to 2 eV of black phosphorus (BP) makes it to fill the gap in graphene. When studying the properties of BP more comprehensive, scientists have discovered that many twodimensional materials, such as tellurene, antimonene, bismuthene, indium selenide and tin sulfide, have similar structures and properties to black phosphorus thus called black phosphorus analogs. In this review, we briefly introduce preparation methods of black phosphorus and its analogs, with emphasis on the method of mechanical exfoliation (ME), liquid phase exfoliation (LPE) and chemical vapor deposition (CVD). And their characterization and properties according to their classification of singleelement materials and multi-element materials are described. We focus on the performance of passively mode-locked fiber lasers using BP and its analogs as saturable absorbers (SA) and demonstrated this part through classification of working wavelength. Finally, we introduce the application of BP and its analogs, and discuss their future research prospects.
Keywords black phosphorus and its analogs      passively mode-locked fiber lasers      optoelectronic characteristics      saturable absorber     
Corresponding Author(s): Bo Gao,Ying Han,Bing-Kun Chen,Jia-Yu Huo   
Just Accepted Date: 26 January 2021   Issue Date: 12 April 2021
 Cite this article:   
Ying-Ying Li,Bo Gao,Ying Han, et al. Optoelectronic characteristics and application of black phosphorus and its analogs[J]. Front. Phys. , 2021, 16(4): 43301.
 URL:  
https://academic.hep.com.cn/fop/EN/10.1007/s11467-021-1052-2
https://academic.hep.com.cn/fop/EN/Y2021/V16/I4/43301
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