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Emerging of two-dimensional materials in novel memristor |
Zhican Zhou1,2, Fengyou Yang2, Shu Wang2, Lei Wang2,3, Xiaofeng Wang2, Cong Wang4( ), Yong Xie5(), Qian Liu1,2() |
1. MOE Key Laboratory of Weak-Light Nonlinear Photonics, Department of Physics, Nankai University, Tianjin 300071, China
2. CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100190, China
3. College of Mathematics and Physics, Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory, Qingdao University of Science and Technology, Qingdao 266061, China
4. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
5. School of Physics, Beihang University, Beijing 100191, China |
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Abstract The rapid development of big-data analytics (BDA), internet of things (IoT) and artificial intelligent Technology (AI) demand outstanding electronic devices and systems with faster processing speed, lower power consumption, and smarter computer architecture. Memristor, as a promising Non-Volatile Memory (NVM) device, can effectively mimic biological synapse, and has been widely studied in recent years. The appearance and development of two-dimensional materials (2D material) accelerate and boost the progress of memristor systems owing to a bunch of the particularity of 2D material compared to conventional transition metal oxides (TMOs), therefore, 2D material-based memristors are called as new-generation intelligent memristors. In this review, the memristive (resistive switching) phenomena and the development of new-generation memristors are demonstrated involving grapheme (GR), transition-metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) based memristors. Moreover, the related progress of memristive mechanisms is remarked.
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memristor
resistive switching
2D material
switching mechanism
conductive channel
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Corresponding Author(s):
Cong Wang,Yong Xie,Qian Liu
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Issue Date: 18 October 2021
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